SiC/SiC and SiC/Kovar joining by Ni–Si and Mo interlayers

Overview of transient liquid phase and partial transient liquid phase bonding

“…This technique can also be used in conventional TLP bonding to accelerate isothermal solidification [13,99,140] • Active TLP bonding: a ceramic and metal can be joined by a multi-component interlayer; at least one constituent reacts with the ceramic while another diffuses into the metal to cause isothermal solidification [28,42,52,54,116,132,196] • Partial TLP bonding (see next section).…”

“…The refractory core tends to be a foil that is 20-30 lm [143,[207][208][209][210][211][212][213][214] or 100-127 lm thick [116,188,189,201,207,[211][212][213][215][216][217][218][219][220][221][222], although it can be in the 200-1000 lm range [202-205, 208, 223-225]. The refractory core element is often Ni [144, 189, 196, 201-204, 207-210, 218, 224, 226, 227]; other elements (and an alloy) that have been used include Au, Co, Cu, Nb, Ni-Cr, Pd, Pt, Si, Ta, Ti, and V [117, 188, 189, 200-202, 205-208, 214-218, 222, 227-229].…”

“…The thin layers can be most of the formats used for TLP bonding interlayers (see TLP bonding process) and are often in the 1-10 lm thick range. The ratio of the thin layer thickness over the refractory core thickness is usually 1-5% [143, 188, 189, 201-204, 207, 208, 211-213, 215-218, 220, 222-225, 230, 231], although it can be 6-20% [207, 210-213, 219, 221, 223], and some PTLP bond experiments have utilized a ratio of 50% or higher [116,144,208,214,226].…”

Joining of silicon carbide ceramics using a silicon carbide tape

“…Various methods have either already been developed or are currently being developed for joining SiC to SiC, either monolithic SiC or its composites, for a variety of applications. These methods include the following: Active metal brazing using Ag–Cu–Ti or Ni–Si alloys Diffusion bonding with a Ti insert resulting in Ti 3 SiC 2 /Ti 5 Si 3 in the bonding layer, with a Mo insert resulting in Mo 5 Si 3 + C or Mo 5 Si 3 C phases in the bonding layer, with a Zr insert resulting in ZrSi 2 , Zr 5 Si 3 C x , and Zr 4 Si phases in the bonding layer, with a Cr‐Ni insert resulting in Cr 3 Si 3 C phase in the bonding layer, with a TiC‐Al interlayer resulting in TiAl 3 and Al 4 C 3 in the bonding layer, with a Ti 3 SiC 2 interlayer resulting in Ti 3 SiC 2 phase in the bonding layer, and with a Ti–Si–C interlayer resulting in TiC and TiSi 2 phases in the bonding layer …”

Pressure‐less joining of C/SiC and SiC/SiC by a MoSi2/Si composite

“…12 Stresses due to thermal expansion mismatch after joining can be significantly reduced using a Mo interlayers because of similarity in Mo and SiC CTE (SiC=2.2910 -6 / K; C/SiC=2910 -6 /K, SiC/SiC=4910 -6 /K Mo=5910 -6 /K) 13 As an example, an interesting joining material has been obtained by combining Ni-Si with Mo for the joining of SiC. 14 Several papers report on the joining of bulk SiC by solid state diffusion bonding using refractory metals (Ti, V, Cr, W,. .…”