SiC power semiconductors in HEVs: Influence of junction temperature on power density, chip utilization and efficiency

Wrzecionko, Benjamin; Biela, J.; Kolar, Johann W.

doi:10.1109/iecon.2009.5415122

Cited by 80 publications

(30 citation statements)

References 13 publications

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“…However, there are other factors at play here. These concerns have been echoed in a 2009 publication by Wrzecionko [18]. They demonstrated that although the theoretical limit for the operation of SiC power devices can be as high as 700 • C, in reality the optimum temperature was less than 300 • C. The authors were of the opinion that if a device is operated below the optimum temperature, it was not possible to take complete advantage of the junction gate field-effect transistor (JFET).…”

Section: Requirements Of Silicon Carbide Packagingmentioning

confidence: 94%

High Performance Silicon Carbide Power Packaging—Past Trends, Present Practices, and Future Directions

Seal

Mantooth

2017

Energies

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This paper presents a vision for the future of 3D packaging and integration of silicon carbide (SiC) power modules. Several major achievements and novel architectures in SiC modules from the past and present have been highlighted. Having considered these advancements, the major technology barriers preventing SiC power devices from performing to their fullest ability were identified. 3D wire bondless approaches adopted for enhancing the performance of silicon power modules were surveyed, and their merits were assessed to serve as a vision for the future of SiC power packaging. Current efforts pursuing 3D wire bondless SiC power modules were described, and the concept for a novel SiC power module was discussed.

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Section: Requirements Of Silicon Carbide Packagingmentioning

confidence: 94%

High Performance Silicon Carbide Power Packaging—Past Trends, Present Practices, and Future Directions

Seal

Mantooth

2017

Energies

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“…This means that the converter can be operated at a higher junction temperature [2,3] and has a better heat dissipation, which eventually leads to less need for thermal management and cooling, also resulting in more compact converters. Motor drive inverters will also benefit from the fast switching feature of SiC devices provided a small dv/dt or sine wave filter is used between the inverter and the motor.…”

Section: Introductionmentioning

confidence: 99%

SiC MOSFETs for future motor drive applications

Tiwari

Midtgård

Undeland

2016

2016 18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe)

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This paper investigates the switching performance of six-pack SiC MOSFET and Si IGBT modules for motor drive applications. Both the modules have same packaging and voltage rating (1.2 kV). The three bridge legs of the modules are paralleled forming a single half-bridge configuration for achieving higher output power. Turn-on and turn-off switching energy losses are measured using a standard double pulse methodology. The conduction losses from the datasheet and the switching energy losses obtained from the laboratory measurements are used as a look up table input when simulating the detailed inverter losses in a three-phase motor drive inverter. The total inverter loss is plotted for different switching frequencies in order to illustrate the performance improvement that SiC MOSFETs can bring over Si IGBTs for a motor drive inverter from the efficiency point of view. The overall analysis gives an insight into how SiC MOSFET outperforms Si IGBT over all switching frequency ranges with the advantages becoming more pronounced at higher frequencies and temperatures.

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“…The disadvantage of silicon carbide devices is the relatively large value of forward voltage (for example 2.4 V at forward currents 4 A (CSD04060) and 8 A (CSD08060) [5]). The operation of SiC devices in the wide range of ambient temperature have been studied by many authors [7][8][9], and it is believed that the ambient temperature limit for their operation may, in the future, exceed 600…”

Section: Introductionmentioning

confidence: 99%

DC characteristics of the SiC Schottky diodes

Janke¹,

Hapka²,

Oleksy³

2011

Bulletin of the Polish Academy of Sciences: Technical Sciences

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Abstract. The isothermal and non-isothermal characteristics of silicon carbide Schottky diodes in the wide range of currents and ambient temperatures are investigated in this paper. The measurements of the diodes characteristics have been performed with the use of a pulse method, with fast registration of measurement points after the diode current turning on, or with the use of a fully static method, in which the self-heating phenomenon is taken into account. Apart from the measurements, the series of numerical experiments, giving the isothermal and non-isothermal characteristics as a result, were executed. The complex, accurate numerical procedures as well as simplified analytical calculations were implemented. A good conformity of all calculation and measurement results have been obtained.In the presented investigations, for relatively high currents and ambient temperatures, the influence of self-heating on the SiC Schottky diodes static characteristics is significant. The large (even 4 V for the ambient temperature 300• C ) values of voltages corresponding to the nominal diode currents have been observed.

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SiC power semiconductors in HEVs: Influence of junction temperature on power density, chip utilization and efficiency

Cited by 80 publications

References 13 publications

High Performance Silicon Carbide Power Packaging—Past Trends, Present Practices, and Future Directions

High Performance Silicon Carbide Power Packaging—Past Trends, Present Practices, and Future Directions

SiC MOSFETs for future motor drive applications

DC characteristics of the SiC Schottky diodes

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