SiC polytypes and doping nature effects on electrical properties of ZnO-SiC Schottky diodes

Abstract

SiC polytypes and doping nature effects on electrical properties of ZnO-SiC Schottky diodes, (2017), doi:10.1016/j.mee.2017 This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting proof before it is published in its final form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain.A C C E P T E D M A N U S C R I P T ACCEPTED MANUSCRIPT AbstractElectrical properties of ZnO/SiC Schottky diodes with two SiC polytypes and N and P doping are investigated. Characterization was performed through I-V and C-V-f measurements. Schottky barrier height (Φ b ), ideality factor (n), and series resistance (R s ) were extracted from forward I-V characteristics.(Φ b ), carrier's concentrations (N d -N a ) and (R s ) frequency dependence were extracted from C-V-f characteristics. The extracted n values suggest that current transport is dominated by interface generationrecombination and/or barrier tunneling mechanisms. When changing SiC polytypes, the rectifying ratio of ZnO/n-4HSiC is found to be twice that of ZnO/n-6HSiC. A change in doping nature gave a leakage current ratio of 40 between ZnO/p-4HSiC and ZnO/n-4HSiC. These results indicate that ZnO/p-4HSiC diodes have a complex current transport compared to diodes on n-type SiC. From I-V measurements, barrier height values are 0.63eV, 0.65eV and 0.71 eV for heterojunction grown on n-6HSiC, n-4HSiC and p-4HSiC, respectively. C-V measurements gave higher values indicating the importance of interface density of states. N ss values at 1MHz frequency are 4.54×10 11 eV -1 cm -2 , 3×10 12 eV -1 cm -2 and 8.13×1010 eV -1 cm -2 for ZnO/n-6HSiC, ZnO/n-4HSiC and ZnO/p-4HSiC, respectively. Results indicate the importance of SiC polytypes and its doping nature.

The Effects Of N-GaAs Substrate Orientations on The Electrical Performance of PANI/N-GaAs Hybrid Solar Cell Devices

“…Table 1, summarize the results of the three fabricated solar cells. (Rebaoui et al, 2017). Therefore, contact resistance cause to increase in the value of series resistance which in turn decreases Voc and efficiency of the solar cell.…”

“…Additionally, it can be seen from Figure 2 that, for all three devices, the forward bias I-V measurements deviate significantly from linearity with increasing voltage. This could be related to the effects of series resistance (Rebaoui et al, 2017). Moreover, from Figure 2 at the applied voltage of ±1V, it was observed that the values of diode rectification ratio (which can be determined by dividing the forward current (IF) to the reverse current (IR)) for PANI/(100) n-GaAs, PANI/(110) n-GaAs and PANI/(311)B n-GaAs devices are 5.35, 1.13 and 15.23, respectively as exhibited in Table 2.…”

Effect of rapid thermal annealing on the electrical properties of dilute GaAsPN based diodes

“…The leakage current of the annealed diodes is one to two orders of magnitude lower than the as-grown diodes. The lower reverse current observed in the annealed diodes indicates that there is a reduction of the concentration of the defects which act as generationrecombination centers [16]. The annealing process decreases the concentration of major defects and consequently contributes to the decrease of the leakage current [17].…”

Effect of the Si doping on the properties of AZO/SiC/Si heterojunctions grown by low temperature pulsed laser deposition

“…The higher ideality factor for the AZO/SiC/p-Si device indicates that thermionic emission is no longer the dominant transport mechanism. Other mechanisms such as barrier tunnelling and/or generation recombination in the space charge region, due to trap states, exist [28,78].…”

“…However, so far, little has been done on the combination of these materials. Some of the published works reported on ZnO/SiC heterojunctions grown directly either on 4H-SiC or 6H-SiC substrates [27][28][29][30], whilst in other works silicon was employed as the substrate of the heterojunction [31][32][33][34][35].…”