“…EMICONDUCTOR materials with wide bandgap, high breakdown field, operating temperature, switching frequencies, thermal conductivity and stability are well-suited for applications in photodetection devices [1]. Silicon Carbide (SiC) has these outstanding physical properties and the photodiodes based on it have excellent performance in harsh environments [2], [3], [4], being suitable for optoelectronic applications in extreme conditions, under high-intensity UV radiation and at high temperature, with sensitivity, response and performance that can be tailored through the appropriate choice of the SiC polytype cubically (3C-SiC) [1], [6] [7] and hexagonally (4H-SiC or 6H-SiC) [8], [9], [10], [11].…”