Pulsed laser deposition of high-transparency molybdenum oxide thin films

Holovský, Jakub; Horynová, Eva; Horák, Lukáš; Ridzoňová, Katarína; Remeš, Z.; Landová, Lucie; Sharma, Rupendra Kumar

doi:10.1016/j.vacuum.2021.110613

Cited by 5 publications

(2 citation statements)

References 28 publications

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“…The PLD system employed uses a Q-switched tripled Nd:YAG laser (Quantel mod. YG78C20, λ = 355 nm) generating 6 ns width pulses with an energy of 80 mJ per pulse [33,34,36]. The density of energy was maintained at 1.2 J cm −2 , and the repetition rate was 4 Hz.…”

Section: Moo 3 Depositionmentioning

confidence: 99%

“…When the annealing is performed at temperatures greater than 400 • C, it produces monoclinic β-phase MoO 3 films, not useful to exploit an optical phonons response [32]. Pulsed laser deposition (PLD) is a versatile and low-cost deposition technique which has already been employed for the deposition of α-phase MoO 3 films at 500 • C [33] and other metal oxides such as VO 2 [34], and ZnO [35]. Compared with the exfoliation technique, it allows depositing large area MoO 3 films, which can be much more easily handled and integrated into a multilayer structure.…”

Section: Introductionmentioning

confidence: 99%

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Large-area polycrystalline α-MoO₃ thin films for IR photonics

Larciprete,

Ceneda,

Yang

et al. 2024

J. Phys. D: Appl. Phys.

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In recent years, the excitation of surface phonon polaritons (SPhPs) in van der Waals materials received wide attention from the nanophotonics community. Alpha-phase Molybdenum trioxide (-MoO3), a naturally occurring biaxial hyperbolic crystal, emerged as a promising polaritonic material due to its ability to support SPhPs for three orthogonal directions at different wavelength bands (range 10–20 m). Here, we report on the fabrication, structural, morphological, and optical IR characterization of large-area (over 1 cm2 size) -MoO3 polycrystalline film deposited on fused silica substrates by pulsed laser deposition. Due to the random grain distribution, the thin film does not display any optical anisotropy at normal incidence. However, the proposed fabrication method allows us to achieve a single -phase, preserving the typical strong dispersion related to the phononic response of -MoO3 flakes. Remarkable spectral properties of interest for IR photonics applications are reported. For instance, a polarization-tunable reflection peak at 1006 cm-1 with a dynamic range of R=0.3 and a resonance Q-factor as high as 53 is observed at 45° angle of incidence. Additionally, we report the fulfillment of an impedance matching condition with the SiO2 substrate leading to a polarization-independent almost perfect absorption condition (R<0.01) at 972 cm-1 which is maintained for a broad angle of incidence. In this framework our findings appear extremely promising for the further development of mid-IR lithography-free, scalable films, for efficient and large-scale sensors, filters, thermal emitters, and label-free biochemical sensing devices operating in the free space, using far-field detection setups.

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Section: Moo 3 Depositionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Large-area polycrystalline α-MoO₃ thin films for IR photonics

Larciprete,

Ceneda,

Yang

et al. 2024

J. Phys. D: Appl. Phys.

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Silicon‐Inspired Analysis of Interfacial Recombination in Perovskite Photovoltaics

Gillespie,

Gautier,

van der Burgt

et al. 2024

Advanced Energy Materials

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Perovskite solar cells have reached an impressive certified efficiency of 26.1%, with a considerable fraction of the remaining losses attributed to carrier recombination at perovskite interfaces. This work demonstrates how time‐resolved photoluminescence spectroscopy (TRPL) can be utilized to locate and quantify remaining recombination losses in perovskite solar cells, analogous to methods established to improve silicon solar cell passivation and contact layers. It is shown how TRPL analysis can be extended to determine the bulk and surface lifetimes, surface recombination velocity, the recombination parameter, J0, and the implied open‐circuit voltage (iVoc) of any perovskite device configuration. This framework is used to compare 18 carrier‐selective and passivating contacts commonly used or emerging for perovskite photovoltaics. Furthermore, the iVoc values calculated from the TRPL‐based framework are directly compared to those calculated from photoluminescence quantum yields and the measured solar cell Voc. This simple technique serves as a practical guide for screening and selecting multifunctional, passivating perovskite contact layers. As with silicon solar cells, most of the material and interface analysis can be done without fabricating full devices or measuring efficiency. These purely optical measurements are even preferable when studying bulk and interfacial passivation approaches, since they remove complicating effects from poor carrier extraction.

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Room-temperature ammonia gas sensor based on Ni-doped MoO3 thin film prepared by spray pyrolysis method

Ganesh,

Yahia,

Algarni

2023

J Mater Sci: Mater Electron

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Pulsed laser deposition of high-transparency molybdenum oxide thin films

Cited by 5 publications

References 28 publications

Large-area polycrystalline α-MoO₃ thin films for IR photonics

Large-area polycrystalline α-MoO₃ thin films for IR photonics

Silicon‐Inspired Analysis of Interfacial Recombination in Perovskite Photovoltaics

Room-temperature ammonia gas sensor based on Ni-doped MoO3 thin film prepared by spray pyrolysis method

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Pulsed laser deposition of high-transparency molybdenum oxide thin films

Cited by 5 publications

References 28 publications

Large-area polycrystalline α-MoO3 thin films for IR photonics

Large-area polycrystalline α-MoO3 thin films for IR photonics

Silicon‐Inspired Analysis of Interfacial Recombination in Perovskite Photovoltaics

Room-temperature ammonia gas sensor based on Ni-doped MoO3 thin film prepared by spray pyrolysis method

Contact Info

Product

Resources

About

Large-area polycrystalline α-MoO₃ thin films for IR photonics

Large-area polycrystalline α-MoO₃ thin films for IR photonics