SiC MESFETs for High-Frequency Applications

Sriram, S.; Ward, A.; Henning, Jason; Allen, Scott T.

doi:10.1557/mrs2005.79

Cited by 12 publications

(7 citation statements)

References 6 publications

(4 reference statements)

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“…The main use of SiC RF devices appears to lie in high-frequency solid-state high-power amplification at frequencies from around 600 MHz (UHF-band) to perhaps as high as a few gigahertz (X-band). As discussed in far greater detail in References 5,6,25,26,159, and elsewhere, the high breakdown voltage and high thermal conductivity coupled with high carrier saturation velocity allow SiC RF transistors to handle much higher power densities than their silicon or GaAs RF counterparts, despite SiC's disadvantage in low-field carrier mobility (Table 5.1). The higher thermal conductivity of SiC is also crucial in minimizing channel self-heating so that phonon scattering does not seriously degrade carrier velocity.…”

Section: Sic Rf Devicesmentioning

confidence: 99%

Silicon Carbide Technology

Neudeck¹

2006

The VLSI Handbook, Second Edition

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Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines [1][2][3][4][5][6][7]. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be widely realized in commercially available SiC devices, primarily owing to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems.This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and the well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high-temperature and high-power SiC electronics are identified.possible SiC polytypes with hexagonal crystal structure. Similarly, 15R-SiC is the most common of the many possible SiC polytypes with a rhombohedral crystal structure.

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Section: Sic Rf Devicesmentioning

confidence: 99%

Silicon Carbide Technology

Neudeck¹

2006

The VLSI Handbook, Second Edition

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“…Among these materials, SiC attracts great attention because it is a naturally p-type semiconductor with a bandgap of 3.0 eV (for 6H-SiC) 13 , has a relatively small lattice mismatch to ZnO (4–5% compared to, e.g. 18% between ZnO and Al 2 O 3 ) 12 14 15 , and possesses many additional unique merits (e.g., high thermal stability, excellent chemical stability, high thermal conductivity, and electron mobility) 13 16 . It has been shown that SiC and ZnO can form high quality interfaces 17 promising this material combination to be applied in and beneficial for various optoelectronic devices, such as light emitting diodes, photodetectors, and solar cells.…”

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confidence: 99%

The isotype ZnO/SiC heterojunction prepared by molecular beam epitaxy – A chemical inert interface with significant band discontinuities

Zhang

Lin

et al. 2016

Sci Rep

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ZnO/SiC heterojunctions show great potential for various optoelectronic applications (e.g., ultraviolet light emitting diodes, photodetectors, and solar cells). However, the lack of a detailed understanding of the ZnO/SiC interface prevents an efficient and rapid optimization of these devices. Here, intrinsic (but inherently n-type) ZnO were deposited via molecular beam epitaxy on n–type 6H-SiC single crystalline substrates. The chemical and electronic structure of the ZnO/SiC interfaces were characterized by ultraviolet/x-ray photoelectron spectroscopy and x-ray excited Auger electron spectroscopy. In contrast to the ZnO/SiC interface prepared by radio frequency magnetron sputtering, no willemite-like zinc silicate interface species is present at the MBE-ZnO/SiC interface. Furthermore, the valence band offset at the abrupt ZnO/SiC interface is experimentally determined to be (1.2 ± 0.3) eV, suggesting a conduction band offset of approximately 0.8 eV, thus explaining the reported excellent rectifying characteristics of isotype ZnO/SiC heterojunctions. These insights lead to a better comprehension of the ZnO/SiC interface and show that the choice of deposition route might offer a powerful means to tailor the chemical and electronic structures of the ZnO/SiC interface, which can eventually be utilized to optimize related devices.

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“…Parasitic gate effects, such as hysteresis in the drain-source current, in high frequency SiC devices were also attributed to the presence of V-related deep levels [18][19][20][21]. While HPSI substrates offered a promise of eliminating the parasitic effects caused by high V doping, the difficulty to achieve reproducible concentration of deep levels limited the adoption of the HPSI method for commercial device applications.…”

Section: Introductionmentioning

confidence: 99%