2019
DOI: 10.1016/j.cplett.2019.05.025
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SiAs2/GeP2 heterostructure for solar cell: A first-principles calculation

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Cited by 5 publications
(9 citation statements)
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“…This may provide ideas for the synthesis of GeP 2 . Nevertheless, for 2D GeN 2 , GeSb 2 , and GeBi 2 , no experimental work has been reported thus far, and since their structures and potential properties have been preliminarily predicted by first‐principles calculations, 229–231 in‐depth property exploration and material synthesis are urgently required.…”
Section: Ge‐va Binary Compoundsmentioning
confidence: 99%
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“…This may provide ideas for the synthesis of GeP 2 . Nevertheless, for 2D GeN 2 , GeSb 2 , and GeBi 2 , no experimental work has been reported thus far, and since their structures and potential properties have been preliminarily predicted by first‐principles calculations, 229–231 in‐depth property exploration and material synthesis are urgently required.…”
Section: Ge‐va Binary Compoundsmentioning
confidence: 99%
“…Reproduced with permission. 225 Copyright 2019, Elsevier calculations, [229][230][231] in-depth property exploration and material synthesis are urgently required.…”
Section: Germanium Dipnictidesmentioning
confidence: 99%
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“…Figure 7d shows the PCE contour, and the practical upper limit of PCE for the heterobilayers of γ-BTe/GeP 2 can reach up to 21.76% which is especially highlighted as a blue star. Note that the obtained η of our proposed type-II heterostructure are comparable to that of typical heterobilayers, such as MoS 2 /bilayer phosphorene (18%), 58 g-SiC 2 / ZnO (20%), 11 different edge-modified phosphorene nanoribbons (20%), 57 HfTeSe 4 /Bi 2 WO 6 heterostructure (20.8%), 47 KAgSe/Ca(OH) 2 (21.5%), 56 α-AsP/GaN (22.1%), 7 and much higher than SiAs 2 /GeP 2 heterostructure (12.1%), 62 Dion− Jacobson perovskite (15.75%) 63 and CsPb 0.995 Nb 0.005 I 2 Br perovskite (16.45%) 64 solar cells, as shown in Figure 8. In addition, strain engineering can tune the electronic structures of monolayer γ-BTe and then can adjust the value of PCE in the fabricated γ-BTe/GeP 2 heterojunction, as shown in Tables S3−S5.…”
Section: Specificallymentioning
confidence: 99%
“…29,30,32,33,44,45 Recently, numerous researchers have investigated heterostructures based on a combination of individual pentagonal monolayers and reported fascinating properties for future applications. [46][47][48][49][50] For example, Wang et al 46 found that the KAgSe/SiC 2 heterojunction exhibits a type-III band alignment that can be modified by a transition from type-III to type-I/II band alignment under external electric field. Zhang et al 47 demonstrated that the SiAs 2 /GeP 2 heterojunction exhibits a type-II band alignment with a desirable power conversion efficiency of up to 12.1%, indicating good properties for solar energy conversion in photovoltaic applications.…”
Section: Introductionmentioning
confidence: 99%