Si/SiGe heterostructure mitatt diode

Noise Performance of Heterojunction DDR MITATT Devices Based on at W-Band

“…The slight discrepancy in the simulated and experimentally reported values RF power output and DC-to-RF conversion efficiency may be due to the slight difference in the design parameters and DC bias current density. The first experimental results on Si/Si 1− Ge heterostructure mixed tunneling avalanche transit time (MITATT) diodes were reported by Luy et al [44] in 1988. They obtained 25 mW of RF power output with 1.3% of conversion efficiency at 103 GHz.…”

Design optimization of a single-sided Si/SiGe heterostructure mixed tunnelling avalanche transit time double drift region

“…The computation starts by putting the noise source at the beginning of the generation region. The noise electric field e(x, x ) corresponding to the location of the noise source is computed by solving equation (6), form which the terminal voltage and transfer impedances are determined by using equations ( 2) and (3). The noise source γ is then shifted to the next space step and the process is repeated until γ covers the whole generation region.…”

“…Most of these heterostructures are based on lattice-matched III-V compound semiconductors. The first experimental results for a lattice-mismatched Si/Si x Ge 1−x (for x = 0.6) heterostructure MITATT based on Si technology were reported by Luy et al [6], where they have obtained a low-noise continuous-wave output power of 25 mW at 103 GHz with an efficiency of only 1.3%. Further theoretical work on this heterostructure to improve its efficiency and other microwave properties for operation in MITATT mode is not seen in the published literature.…”

“…These results indicate that the ionization rate for holes in SiGe is higher than the electron ionization rate, contrary to the observation in pure silicon. In their work, Luy et al [6] have reported an Si/SiGe heterostructure MITATT double drift region (DDR), where the avalanche region on both p and n sides consists of the SiGe layer and the drift region is grown from pure silicon. However, taking into consideration the higher ionization rate for holes in SiGe, we suggest in this paper a new Si/Si 0.5 Ge 0.5 heterostructure MITATT DDR with the SiGe layer on the p-side avalanche zone only and silicon on the n-side avalanche zone (having the higher electron ionization rate).…”

Effect of Mobile Space Charge in Si/Si0.9Ge0.1 Heterojunction Double Drift Impart Oscillator at W-Band Window Frequency

“…Moreover Si 1-x Ge x with Si has come up as a technologically important material combination for both electronic and opto-electronic devices [8][9][10][11][12]. Luy et al [13] in Daimler Chrysler have fabricated Si 1-x Ge x (for x=0.6) heterostructure MITATT based on Si and have obtained 25mW of power with a conversion efficiency of 1.03% at 103 GHz. Mishra et al [14] assumed that the hole ionization rate in SiGe is higher than electron ionization rate and has proposed a single-sided (Si/Si 1-x Ge x ) heterostructure MITATT for x=0.5.…”