Design optimization of a single-sided Si/SiGe heterostructure mixed tunnelling avalanche transit time double drift region

Abstract

The potential of an Si/SiGe heterostructure mixed tunnelling avalanche transit time double drift region (DDR) with an SiGe layer on the p side alone is investigated. Our results indicate that this newly proposed structure has better mm wave properties and lower noise than the Si homostructure diode and Si/SiGe heterostructure diode with an SiGe layer on both n and p sides. Further, our results show that the diode properties are optimized for a particular width of the SiGe layer in the single-sided Si/SiGe heterostructure DDR.

Effect of Mobile Space Charge in Si/Si0.9Ge0.1 Heterojunction Double Drift Impart Oscillator at W-Band Window Frequency

“…Luy et al [13] in Daimler Chrysler have fabricated Si 1-x Ge x (for x=0.6) heterostructure MITATT based on Si and have obtained 25mW of power with a conversion efficiency of 1.03% at 103 GHz. Mishra et al [14] assumed that the hole ionization rate in SiGe is higher than electron ionization rate and has proposed a single-sided (Si/Si 1-x Ge x ) heterostructure MITATT for x=0.5. Many researchers have used the Monte Carlo based ionization rate data for IMPATT/MITATT.…”

Studies on anisotype Si/Si1-xGexheterojunction DDR IMPATTs: efficient millimeter-wave sources at 94 GHz window

“…But due to lack of optimization of their design, they did not get expected power output experimentally. Latter Mishra et al [11] proposed a single-sided Si 1-x Ge x (for x = 0.5) hetero-structure MITATT in 1997 and have shown that this newly proposed structure has better mm-wave properties and lower noise than the Si homo-structure diode. An attempt is made in this paper to study the mm-wave performance of different types of Si/Si 1-x Ge x hetero-structure IMPATT devices and explore the possible best Si/Si 1-x Ge x hetero-structure suitable for efficient mm-wave power generation.…”

Influence of small variation in impact ionization rate data on simulation of 4H-SiC IMPATT

“…It can be realized from most of the semiconductor materials. Simulation has been an important tool for performance analysis of IMPATT devices [1][2][3][4][5][6][7][8][9][10]. The quality and acceptability of the simulation results mostly depends upon the quality of material data used for the same.…”