2013
DOI: 10.1016/j.apsusc.2012.10.129
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Si-rich a-Si1−xCx thin films by d.c. magnetron co-sputtering of silicon and silicon carbide: Structural and optical properties

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Cited by 21 publications
(5 citation statements)
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“…As it can be observed, the IR bands became wider and shifted towards lower wavenumbers after the addition of SiC into the HAp structure. Moreover, no specific absorption bands located between 770 and 680 cm −1 [34,80] , corresponding to SiC stretching bonds, were revealed by FTIR analysis. Thus, it can be assumed that the addition of SiC led to some modifications in the HAp structure; some additional bands at 928 and 906 cm −1 were observed.…”
Section: Xrd After Immersion In Dmem Sbf and Pbsmentioning
confidence: 91%
“…As it can be observed, the IR bands became wider and shifted towards lower wavenumbers after the addition of SiC into the HAp structure. Moreover, no specific absorption bands located between 770 and 680 cm −1 [34,80] , corresponding to SiC stretching bonds, were revealed by FTIR analysis. Thus, it can be assumed that the addition of SiC led to some modifications in the HAp structure; some additional bands at 928 and 906 cm −1 were observed.…”
Section: Xrd After Immersion In Dmem Sbf and Pbsmentioning
confidence: 91%
“…It can be found that the position of Raman peak is slightly downshifted with respect to the peak position of mono-crystalline Si (520 cm −1 ) by about 3 cm −1 for the sample with R = 1 and 1 cm −1 for the sample with R = 5. The red shift compared with a Raman peak from mono-crystalline Si reveals the confinement of optical phonons due to the small grain size in films [20]. According to the empirical formula: D R = 2π √ B/∆ω, where D R is the mean size of Si NC in diameter, B is 2.24 cm −1 for Si and ∆ω is the Raman shift of crystalline peak from mono-crystalline peak located at 520 cm −1 , respectively [21], the Raman peaks shift to lower wave numbers by values of ∆ω = 1~3 cm −1 may be caused by Si NCs sizes of around 5.4~9.4 nm, which indicates the mean size of Si NCs are increased with the Si/C ratio in B-doped Si NCs:a-SiC films.…”
Section: Nanostructurementioning
confidence: 95%
“…As it can be noticed in Figure 5, the IR bands attributed to pure HA coating became wider and shift towards lower wavenumbers after SiC or SiC and Ag were added into the HA structure. Note that no specific absorption bands located between 770 and 680 cm −1 [58,59], corresponding to the SiC stretching bond, were revealed via FT-IR analysis. Previous IR studies have shown that the structure of HA remains unaffected after Ag addition [60,61], whereas SiC addition leads to crystallinity decrease in HA coatings [53], confirmed by our XRD results.…”
Section: Surface Morphology Elemental and Phase Composition Of The In...mentioning
confidence: 99%