In unintentionally Si-doped AlN, the electron paramagnetic resonance (EPR) spectrum of the Si shallow donor (g=1.9905) was observed in darkness at room temperature. The temperature dependence of the EPR signal suggests that Si in AlN is a DX center with the DX- state lying at similar to 78 meV below the neutral shallow donor state. With such relatively small thermal activation energy, Si is expected to behave as a shallow dopant in AlN at normal device operating temperatures.Original Publication:Nguyen Son Tien, M Bickermann and Erik Janzén, Shallow donor and DX states of Si in AlN, 2011, APPLIED PHYSICS LETTERS, (98), 9, 092104.http://dx.doi.org/10.1063/1.3559914Copyright: American Institute of Physicshttp://www.aip.org