Negative-U behavior of the Si donor in Al0.77Ga0.23N

Trinh, Xuan Thang; Nilsson, Daniel; Ivanov, Ivan Gueorguiev; Janzén, Erik; Kakanakova‐Georgieva, Anelia; Són, Nguyên Tiên

doi:10.1063/1.4816266

Cited by 9 publications

(1 citation statement)

References 36 publications

(32 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…1) similar to the case of Al 0.77 Ga 0.23 N:Si for which the neutral state d 0 is $3 meV above the Femi level, 20 and the thermal-induced population on d 0 at low temperatures is detectable by EPR. In layers with x $ 0.83-0.85, the EPR signal can still be detected in darkness, but only at elevated temperatures (T !…”

Section: Stable and Metastable Si Negative-u Centers In Algan And Alnsupporting

confidence: 53%

Stable and metastable Si negative-U centers in AlGaN and AlN

Trinh

Nilsson

Ivanov

et al. 2014

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

Electron paramagnetic resonance studies of Si-doped AlxGa1−xN (0.79 ≤ x ≤ 1.0) reveal two Si negative-U (or DX) centers, which can be separately observed for x ≥ 0.84. We found that for the stable DX center, the energy |EDX| of the negatively charged state DX−, which is also considered as the donor activation energy, abruptly increases with Al content for x ∼ 0.83–1.0 approaching ∼240 meV in AlN, whereas EDX remains to be close to the neutral charge state Ed for the metastable DX center (∼11 meV below Ed in AlN).

show abstract

Section: Stable and Metastable Si Negative-u Centers In Algan And Alnsupporting

confidence: 53%

Stable and metastable Si negative-U centers in AlGaN and AlN

Trinh

Nilsson

Ivanov

et al. 2014

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

show abstract

Excitation‐dependent carrier dynamics in Al‐rich AlGaN layers and multiple quantum wells

Ščajev

Miasojedovas

Jarašiūnas

et al. 2015

Physica Status Solidi (b)

View full text Add to dashboard Cite

The combined temporally, spatially and spectrally-resolved optical techniques, namely the photoluminescence, light induced transient grating, and differential reflectivity were used for investigation of excitation-dependent PL efficiency, exciton lifetime, and diffusion coefficient in Si-doped Al-rich multiple quantum wells and epilayers at various temperatures. Novel features of carrier recombination and in-plane diffusion were observed. Low-excitation radiative lifetime of 1-2 ns was found temperature-independent in 80-150 K interval, while it sublinearly decreased with excitation at excess carrier densities above 10 18 cm À3 . The lifetime decrease correlated with the increase of diffusion coefficient, indicating excitation-enhanced delocalization of localized excitons and therefore enhanced capture to nonradiative centers. The droop of photoluminescence efficiency with excitation was the strongest at 80-150 K due to strong delocalisation at low-temperatures, while at higher temperatures the thermal activation prevailed in photoluminescence excitation dependence. The photoluminescence efficiency quenching at T > 200 K provided rather high activation energies of $100 and 160 meV for Al-rich multiple quantum wells and epilayers, correspondingly.

show abstract