Si diffusion in p-GaN

Pan, C.-C.; C., G.; Pong, B. J.; Sheu, Jinn-Kong; Chen, J. Y.

doi:10.1116/1.1767826

Cited by 16 publications

(13 citation statements)

References 14 publications

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“…This was a time-consuming process. 7,17) On the other hand, the ion implantation technique has attracive advantages, such as a low resistance, a short processing time, and a simple procedure.…”

Section: Introductionmentioning

confidence: 99%

Si Ion Implantation into Mg-Doped GaN for Fabrication of Reduced Surface Field Metal–Oxide–Semiconductor Field-Effect Transistors

Niiyama

Ootomo

et al. 2008

jjap

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We have studied the activation of Si ion implanted un-and Mg-doped gallium nitride (GaN) for the fabrication of reduced surface field (RESURF) metal-oxide-semiconductor field-effect transistors (MOSFETs). By annealing at 1260 C for 30 s by using rapid thermal annealing (RTA), the activation ratios of un-and Mg-doped GaN with Si doses of 3 Â 10 15 cm À2 were $100 and 73%, respectively. These values are sufficient for application some semiconductor devices. Hardly any diffusion of the Si atoms implanted in GaN was observed by secondary ion mass spectrometry (SIMS). The activation ratio between unand Mg-doped GaN was markedly different at low doses. The cause of the difference appears to be Mg compensation in GaN. In addition, we fabricated GaN MOSFETs with ion implanted RESURF zones. We also monitored the field-effect transitor (FET) operation and high breakdown voltage of the GaN MOSFETs. The threshold voltage was +2 V. An enhancement mode operation and a breakdown voltage higher 1500 V at a RESURF length of 20 mm were achieved.

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Section: Introductionmentioning

confidence: 99%

Si Ion Implantation into Mg-Doped GaN for Fabrication of Reduced Surface Field Metal–Oxide–Semiconductor Field-Effect Transistors

Niiyama

Ootomo

et al. 2008

jjap

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“…Electrical characterization of 0.6-µm-deep Si implantation was done by Sheu et al, who showed 27% of activation at 1000 °C [3]. Diffusion of Si in p-type GaN during annealing was studied by Pan et al [4]. However, the results from using a thick Si layer on top of GaN showed very slow diffusion behaviour in comparison to other reported values [5,6].…”

mentioning

confidence: 96%

Study of Si implantation into Mg‐doped GaN for MOSFETs

Ostermaier

Ahn

Potzger

et al. 2010

Phys. Status Solidi (c)

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In this paper we focus on activation and diffusion during annealing of silicon after implantation into Mg‐doped GaN epitaxial layers. The Si diffusion was analyzed for different capping materials and compared to an uncapped sample. Investigation of the Si concentration obtained from secondary ion mass spectroscopy (SIMS) and comparison with calculation revealed several diffusion constants. Different diffusion behaviours at the surface were detected for different Si concentrations around the solubility of Si in GaN. Further, we found similar Si activation efficiencies in GaN for high and low fluences, after taking into account the compensation of electrons by the p‐type background doping. In addition, we investigated the insulation between Si implanted islands in p‐type GaN and the effect of additional Ar+ implantation. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…P-type doping 1,2,3 and n-type doping 4,5,6 of GaN, which can be conducted either by diffusion 4,7 or ion implantation 1,2,5,6 have attracted much attention. Diffusion is characterized by its simplified fabrication processes.…”

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confidence: 99%

Electro-ridge for large injection current of micro-size InGaN light emitting diode

Pong

Chen

Hsu

et al. 2005

Fifth International Conference on Solid State Lighting

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High-performance, blue micro-size InGaN light emitting diodes (LEDs) with diameters of 3 to 20 m have been fabricated. An ion implantation technique and a 12 micron electro-ridge were used to simplify fabrication processes.The 3 to 20µm LEDs that exhibited a large emission photon blue shift (87.5meV ~52.9meV) were observed in electro-luminescence (EL) spectra. Under an increased injection current, the quantum wells become populated with charge carriers, which screened the internal piezoelectric field and caused the energy blue shift of EL eventually. A high injection current caused a high junction temperature that narrowed the band gap (red shift). The size dependent energy shift is largely owing to the competition between the blue and the red shifts. At a bias voltage of 8.96V (which is 140% of the turn on voltage, 6.4V), the 10 µm device exhibited an injection current of 7.9mA. This value exceeds that in literature, i.e., 4mA at a bias voltage of 14V (which is 140% of the turn on voltage, 10V). This phenomenon may be owing to that the ion implantation and electro-ridge designs herein involved a lower series resistance. The external quantum efficiencies (E.Q.E.) of the micro-size LEDs herein were all 0.4%~3.3%, which is better than the values reported in literature, which were ranged between 0.004% and 1.29% for an individual LED and an array LED, respectively. The E.Q.E. of the 15µm device at maximum injection current had the optimum value yet obtained for micro-size LEDs. The dependence of the blue shift and the E.Q.E. on the size warrants further study.

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Si diffusion in p-GaN

Cited by 16 publications

References 14 publications

Si Ion Implantation into Mg-Doped GaN for Fabrication of Reduced Surface Field Metal–Oxide–Semiconductor Field-Effect Transistors

Si Ion Implantation into Mg-Doped GaN for Fabrication of Reduced Surface Field Metal–Oxide–Semiconductor Field-Effect Transistors

Study of Si implantation into Mg‐doped GaN for MOSFETs

Electro-ridge for large injection current of micro-size InGaN light emitting diode

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