Study of Si implantation into Mg‐doped GaN for MOSFETs

Ostermaier, Clemens; Ahn, Sangtae; Potzger, К.; Helm, M.; Kuzmı́k, J.; Pogány, D.; Strasser, G.; Lee, Jong-Ho; Hahm, Sung−Ho; Lee, Jung‐Hee

doi:10.1002/pssc.200983534

Cited by 3 publications

(1 citation statement)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Under similar annealing conditions (less than 60 min at 1100 • C using AlN-capped heteroepitaxial GaN), no diffusion of implanted Si was observed [90]. However, diffusion coefficients for silicon reported in the literature vary by several orders of magnitude and depend on the capping layer, annealing conditions and sample quality; furthermore, several distinct diffusion mechanisms can take place simultaneously [90][91][92]. Nevertheless, active dopant distributions were shown to be in good agreement with the total Si depth profiles [93].…”

Section: Electrical Dopingmentioning

confidence: 87%

Ion Implantation into Nonconventional GaN Structures

Lorenz

2022

Physics

View full text Add to dashboard Cite

Despite more than two decades of intensive research, ion implantation in group III nitrides is still not established as a routine technique for doping and device processing. The main challenges to overcome are the complex defect accumulation processes, as well as the high post-implant annealing temperatures necessary for efficient dopant activation. This review summarises the contents of a plenary talk, given at the Applied Nuclear Physics Conference, Prague, 2021, and focuses on recent results, obtained at Instituto Superior Técnico (Lisbon, Portugal), on ion implantation into non-conventional GaN structures, such as non-polar thin films and nanowires. Interestingly, the damage accumulation is strongly influenced by the surface orientation of the samples, as well as their dimensionality. In particular, basal stacking faults are the dominant implantation defects in c-plane GaN films, while dislocation loops predominate in a-plane samples. Ion implantation into GaN nanowires, on the other hand, causes a much smaller density of extended defects compared to thin films. Finally, recent breakthroughs concerning dopant activation are briefly reviewed, focussing on optical doping with europium and electrical doping with magnesium.

show abstract

Section: Electrical Dopingmentioning

confidence: 87%

Ion Implantation into Nonconventional GaN Structures

Lorenz

2022

Physics

View full text Add to dashboard Cite

show abstract

Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation

Zhang

Liu

Tadjer

et al. 2017

IEEE Electron Device Lett.

148

View full text Add to dashboard Cite

Ion Implantation Doping in Silicon Carbide and Gallium Nitride Electronic Devices

Roccaforte

Giannazzo

Greco

2022

Micro

View full text Add to dashboard Cite

Wide band gap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are excellent materials for the next generation of high-power and high-frequency electronic devices. In fact, their wide band gap (>3 eV) and high critical electric field (>2 MV/cm) enable superior performances to be obtained with respect to the traditional silicon devices. Hence, today, a variety of diodes and transistors based on SiC and GaN are already available in the market. For the fabrication of these electronic devices, selective doping is required to create either n-type or p-type regions with different functionalities and at different doping levels (typically in the range 1016–1020 cm−3). In this context, due to the low diffusion coefficient of the typical dopant species in SiC, and to the relatively low decomposition temperature of GaN (about 900 °C), ion implantation is the only practical way to achieve selective doping in these materials. In this paper, the main issues related to ion implantation doping technology for SiC and GaN electronic devices are briefly reviewed. In particular, some specific literature case studies are illustrated to describe the impact of the ion implantation doping conditions (annealing temperature, electrical activation and doping profiles, surface morphology, creation of interface states, etc.) on the electrical parameters of power devices. Similarities and differences in the application of ion implantation doping technology in the two materials are highlighted in this paper.

show abstract

Study of Si implantation into Mg‐doped GaN for MOSFETs

Cited by 3 publications

References 11 publications

Ion Implantation into Nonconventional GaN Structures

Ion Implantation into Nonconventional GaN Structures

Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation

Ion Implantation Doping in Silicon Carbide and Gallium Nitride Electronic Devices

Contact Info

Product

Resources

About