Effects of thermal annealing on deep-level defects and minority-carrier electron diffusion length in Be-doped InGaAsN J. Appl. Phys. 97, 073702 (2005); 10.1063/1.1871334Critical Mg doping on the blue-light emission in p -type GaN thin films grown by metal-organic chemical-vapor deposition J.The characteristics of p-type Mg-doped GaN films diffused with Si are studied. N-type conductivity is achieved, and the carrier mobility of diffused GaN is 90-150 cm 2 V Ϫ1 s Ϫ1 , higher than that of p-GaN but less than that of epitaxially grown n-GaN. The Mg acceptor states could become deep compensating defects, and the compensation ratio N A /N D is 0.3, 0.45, 0.6, and 0.75 for 800, 900, 1000, and 1100°C diffused GaN, respectively. The carrier transport may be dominated by electron hopping through these deep compensating centers or through diffusion. The results of temperature-dependent carrier concentration indicate that thermal annealing may induce defects at the surface, leading to an additional activation energy E d ϳ10 meV in the 200-500 K region in diffused GaN.
The kinetics of mechanical stability (embrittlement), stress relief, and crystallization of Fe40Ni40B20 metallic glassy ribbons obtained by different melt spin quenching processes were investigated. Ribbons made with higher rate of quenching exhibit better mechanical stability over those made with lower quenching rate. The thermal stability, temperatures, and activation energies for crystallization of all ribbons, however, are identical. The rates of stress relief are higher for ribbons made with higher quenching rate. Values of activation energy for stress relief are about the same for all ribbons. These activation energies for stress relief are also close to those values reported for structural relaxation.
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