Si(111)/B Surface Reconstruction and Related Phenomena

Chang, Jianlin; Stott, M. J.

doi:10.1002/1521-3951(199704)200:2<481::aid-pssb481>3.0.co;2-u

Cited by 5 publications

(6 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In the present LEEM study, we confirmed that the twinned islands nucleate at 702 C. These results suggest that twin boundary formation does not always correlate with the preservation of B at the interface, which is consistent with the reported calculation results. 6,13) The simple strain-energy model based on bondangling bending force constants revealed no difference in the elastic energy between the twinned and untwinned films with B at the interfaces. 6) Ab initio total energy calculations also showed no significant difference between the energies of the two types of films.…”

Section: Discussionmentioning

confidence: 98%

Growth of Twinned Epitaxial Layers on Si(111)√3×√3-B Studied by Low-Energy Electron Microscopy

Hibino

Watanabe

2005

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Low-energy electron microscopy (LEEM) was used to investigate Si homoepitaxial growth on Si(111)√3×√3-B. Dark-field LEEM images using the (1,0) spot clearly indicate that two-dimensional islands twinned with respect to the substrate nucleate in the initial growth stage. Coalescence of the twinned islands forms twinned epitaxial layers at low growth temperatures. At high temperatures, however, twinned islands are transformed into untwinned islands even during growth, which suggests that small islands favor the twinned orientation, but that the energy difference between twinned and untwinned islands is reversed at a certain island size. After twinned epitaxial layer growth, we also observed transformation into untwinned layers by annealing. The transformation proceeds through the motion of the boundary between twinned and untwinned layers along the surface.

show abstract

Section: Discussionmentioning

confidence: 98%

Growth of Twinned Epitaxial Layers on Si(111)√3×√3-B Studied by Low-Energy Electron Microscopy

Hibino

Watanabe

2005

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…The assignment of surface core level shifts in photoemission measurements remains controversial, 19,[28][29][30] however, despite comparison with ab initio pseudopotential calculations. 31 We are aware of only two experimental structural analyses in which geometrical parameters have been determined quantitatively. Headrick et al 1 have employed grazing-incidence x-ray diffraction using synchrotron radiation, a technique which is not very sensitive to boron because of its low x-ray scattering factor thus leading to relatively poor precision with respect to its position.…”

Section: Introductionmentioning

confidence: 99%

Structure determination of the(3×3)R30°bor

et al. 1999

View full text Add to dashboard Cite

A quantitative structural analysis of the system Si(111)(ͱ3ϫͱ3)R30°-B has been performed using photoelectron diffraction in the scanned energy mode. We confirm that the substitutional S 5 adsorption site is occupied and show that the interatomic separations to the three nearest-neighbor Si atoms are 1.98(Ϯ0.04) Å , 2.14(Ϯ0.13) Å , and 2.21(Ϯ0.12) Å . These correspond to the silicon atom immediately below the boron atom, the adatom immediately above, and the three atoms to which it is coordinated symmetrically in the first layer. ͓S0163-1829͑99͒05819-1͔

show abstract

“…Up to now it is not clear why Si layers grow in twin orientation on the Si(111)‐(√3 × √3)R30°‐B reconstructed surface. As shown recently 30, there is no significant binding of boron to the stacking fault interface and, moreover, the energy of structures with Si in twinned and untwinned position is almost the same. Furthermore, also simple strain energy considerations do not explain the stacking fault formation, since the magnitude of bond‐angle distortion is invariant upon a 180° rotation 5.…”

Section: Resultsmentioning

confidence: 59%

Role of boron and (√3 × √3)‐B surface defects on the growth mode of Si on Si(111): A photoemission and electron diffraction study

Fissel

Krügener

Schwendt

et al. 2010

Physica Status Solidi (a)

View full text Add to dashboard Cite

The influence of boron on Si molecular beam epitaxy was investigated as function of coverage and temperature by reflection high‐energy electron diffraction (RHEED). The development of the boron‐covered Si surface was studied additionally by ultraviolet photo electron spectroscopy (UPS) as function of boron coverage (cB) and annealing condition. We found a direct correlation between the appearance of surface states in UPS and the transient growth behaviour observed in RHEED. For cB > 0.4 monolayer (ML) regular RHEED oscillations occur with a period typically for two bilayers (BLs), whereas for lower cB a transient behaviour with irregular intensity oscillations was observed in the initial growth stages. The appearance of this transient behaviour is discussed in terms of an initial surface defect‐induced nucleation of BL‐high Si islands and the formation of two BLs‐high Si islands on top of the van der Waals‐like perfect boron‐covered surface, respectively. The occurrence of surface defects for cB < 0.6 ML is clearly established in UPS measurements, where an intensity peak slightly below the Fermi level (−0.4 eV) was visible. We suggest that this surface defect level is related to Si adatom dangling bonds acting also as preferential nucleation centres in epitaxy. Furthermore, surface defects results in a significant Fermi level pinning.

show abstract

Si(111)/B Surface Reconstruction and Related Phenomena

Cited by 5 publications

References 0 publications

Growth of Twinned Epitaxial Layers on Si(111)√3×√3-B Studied by Low-Energy Electron Microscopy

Growth of Twinned Epitaxial Layers on Si(111)√3×√3-B Studied by Low-Energy Electron Microscopy

Structure determination of the(3×3)R30°bor

Role of boron and (√3 × √3)‐B surface defects on the growth mode of Si on Si(111): A photoemission and electron diffraction study

Contact Info

Product

Resources

About