Shunt-Zero Based on CMOS Split-Drain: A Practical Approach for Current Sensing

Castaldo, F.; Rodrigues, Phelipe L. S.; Filho, C.A.R.

doi:10.1109/pesc.2005.1581866

Cited by 5 publications

(5 citation statements)

References 6 publications

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“…A comparison between the predicted conversion factors, FC, measured sensitivities, S, and their products with literature is presented in Table I. Results of this paper show significant improvement compared to the values reported previously [26], [27].…”

Section: Study Of Single and Spiral On-chip Concentratorsmentioning

confidence: 51%

Development of GaN Transducer and On-Chip Concentrator for Galvanic Current Sensing

Faramehr

Poluri

Igić

et al. 2019

IEEE Trans. Electron Devices

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Section: Study Of Single and Spiral On-chip Concentratorsmentioning

confidence: 51%

Development of GaN Transducer and On-Chip Concentrator for Galvanic Current Sensing

Faramehr

Poluri

Igić

et al. 2019

IEEE Trans. Electron Devices

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“…The sensitivities S RN and S RP are in general dependent on the electron and hole Hall carrier mobilities ( HN and HP , respectively) and not just the carrier mobilities ( N and P ). The Hall mobility, H is the product of the carrier mobility and the Hall factor r H [14] with electrons having higher Hall factor than holes by almost two times [15]. An extended expression for modeling Hall mobility can be expressed by [16]:…”

Section: Magfet Fundamentals and Proposed Complementary Differential mentioning

confidence: 99%

A novel 0.7 V high sensitivity complementary differential MAGFET sensor for contactless mechatronic applications

Hasan

2010

Sensors and Actuators A: Physical

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“…1. Using the strip technique [9], a 45-µm-width double-metal strip carries the current to be sensed. In this version, the current range increases up to 500 mA, as allowed by the metal thickness available in the 0.35 µm CMOS technology.…”

Section: Implemented Current Sensorsmentioning

confidence: 99%

Magnetically Coupled Current Sensors Using CMOS Split-Drain Transistors

Castaldo

Mognon²,

Filho³

2009

IEEE Trans. Power Electron.

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Integrated current-sensing circuits intended for smart-power and embedded applications featuring galvanic isolation are implemented. They are based on magnetic detection using a CMOS-compatible split-drain transistor that provides a very linear output current versus magnetic field. Two approaches are used to generate the magnetic field: the coil approach and the strip approach. In the first, the current to be sensed flows through an integrated coil placed atop the split-drain transistor and produces a magnetic coupling strong enough to cause a detectable current. The second approach features an array of 126 paralleled split-drain transistors placed along a metal strip intended to carry higher current levels. Both techniques were realized as integrated current sensors built in 0.35 µm CMOS technology. The calculated and measured sensitivities were around 1 and 0.75 µA/A for the coil and strip approaches, respectively. For a typical single splitdrain bias current of 50 µA, the minimum detectable currents within 1 Hz are 2.8 and 42 µA/ √ Hz for the coil and strip approaches, respectively. The strip can carry currents up to 500 mA, whereas the flowing current in the coil is limited to 20 mA. Thus, the choice is based on the resolution and sensing current level of the application.Index Terms-Current measurement, noise correlation, split drain.

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Shunt-Zero Based on CMOS Split-Drain: A Practical Approach for Current Sensing

Cited by 5 publications

References 6 publications

Development of GaN Transducer and On-Chip Concentrator for Galvanic Current Sensing

Development of GaN Transducer and On-Chip Concentrator for Galvanic Current Sensing

A novel 0.7 V high sensitivity complementary differential MAGFET sensor for contactless mechatronic applications

Magnetically Coupled Current Sensors Using CMOS Split-Drain Transistors

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