Shubnikov–de Haas measurements on a high mobility monolayer graphene flake sandwiched between boron nitride sheets

Matsumoto, Naoki; Mineharu, Masaaki; Morikura, Masahiro; Chuang, Chiashain; Ochiai, Y.; Oto, K.; Kim, Gil‐Ho; Watanabe, Kenji; Taniguchi, Takashi; Ferry, D. K.; Cunha, Carlo Requião da; Aoki, Nobuyuki

doi:10.1088/1361-648x/aa6d36

Cited by 3 publications

(2 citation statements)

References 27 publications

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“…Forming the Landau levels is the first condition for the realization of SdH quantum oscillations that form at μ B > 1. , In our C/G device, the carrier mobility μ at 100 K is 6000 cm 2 V –1 s –1 , yielding μ B ≈ 5. Therefore, our C/G device can still observe the quantum oscillations at such a high temperature, a temperature exceeding the surviving temperatures of most reported SdH oscillations in monolayer graphene. , …”

Section: Resultsmentioning

confidence: 63%

Giant Carrier Mobility in Graphene with Enhanced Shubnikov–de Haas Quantum Oscillations: Implications for Low-Power-Consumption Device Applications

Zhang

Wang

et al. 2022

ACS Appl. Nano Mater.

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Graphene devices are susceptible to the surrounding environment. For example, the substrate in contact with graphene influences the device performance because the carriers are confined in two-dimensional (2D) atomic thickness. However, 2D van der Waals dielectric materials used as an interface modifier can provide a path to improve the device quality. In this paper, we report enhanced mobility of up to 540 000 cm 2 V −1 s −1 in monolayer graphene sandwiched between two layers of a CrOCl insulator through a dielectric shielding effect. The Shubnikov−de Haas quantum oscillation is also observed with the amplitude linearly decreasing with increasing temperature, consistent with the standard Lifshitz−Kosevich theory. More strikingly, this oscillation persists to a temperature as high as 100 K because of this enhanced mobility. Our work paves a way to improve the mobility of graphene and realize the nontrivial quantum states at high temperatures for the exploration of low-power-consumption device applications in electronics.

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Section: Resultsmentioning

confidence: 63%

Giant Carrier Mobility in Graphene with Enhanced Shubnikov–de Haas Quantum Oscillations: Implications for Low-Power-Consumption Device Applications

Zhang

Wang

et al. 2022

ACS Appl. Nano Mater.

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“…The Shubnikov -de Haas magnetoresistance oscillations problem was studied theoretically with the quantum kinetic equation method, which was used extensively when studying low-dimensional semiconductor systems (LDS) and for scientifically valid results. In experiments SdH was studied extensively [4][5][6][7][8] and theorical in LDS with case of unconfined phonons [9][10][11][12][13][14]. So in this topic, we used a quantum kinetic to study the effects of confined acoustic phonons on SdH oscillations when electromagnetic waves are present in quantum well (QW).…”

Section: Introductionmentioning

confidence: 99%

Theoretical Investigation of the Shubnikov-de Haas Magnetoresistance Oscillations in a Quantum well under the Influence of Confined Acoustic Phonons

Hung

Thang

Bau

2018

KEM

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The Shubnikov – de Haas magnetoresistance oscillations in the Quantum well (QW) under the influence of confined acoustic phonons, The theoretical results show that the conductivity tensor, the complex magnetic impedance of the magnetic field, the frequency, the amplitude of the laser radiation, the QW width, the temperature of the system and especially the quantum index m characterizes the confinement of the phonon. The amplitude of the oscillations of the Shubnikov-de Haas impedance decreases with the increase of the influence of the confined acoustic phonons. The results for bulk phonons in a QW could be achieved, when m goes to zero. We has been compared with other studies when perform the numerical calculations are also achieved for the GaAs/AlGaAs in the QW. Results show that The Shubnikov-de Haas magnetoresistance oscillations amplitude decrease when phonon confinement effect increasing and when width L of the QW increases to a certain value, The Shubnikov – de Haas magnetoresistance oscillations amplitude completely disappears can not be observed.

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Conductance interference effects in an electron-beam-resist-free chemical vapor deposition graphene device sandwiched between two h-BN sheets

Chuang

Mineharu

Morikura

et al. 2019

Carbon

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Shubnikov–de Haas measurements on a high mobility monolayer graphene flake sandwiched between boron nitride sheets

Cited by 3 publications

References 27 publications

Giant Carrier Mobility in Graphene with Enhanced Shubnikov–de Haas Quantum Oscillations: Implications for Low-Power-Consumption Device Applications

Giant Carrier Mobility in Graphene with Enhanced Shubnikov–de Haas Quantum Oscillations: Implications for Low-Power-Consumption Device Applications

Theoretical Investigation of the Shubnikov-de Haas Magnetoresistance Oscillations in a Quantum well under the Influence of Confined Acoustic Phonons

Conductance interference effects in an electron-beam-resist-free chemical vapor deposition graphene device sandwiched between two h-BN sheets

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