Giant Carrier Mobility in Graphene with Enhanced Shubnikov–de Haas Quantum Oscillations: Implications for Low-Power-Consumption Device Applications

Abstract

Graphene devices are susceptible to the surrounding environment. For example, the substrate in contact with graphene influences the device performance because the carriers are confined in two-dimensional (2D) atomic thickness. However, 2D van der Waals dielectric materials used as an interface modifier can provide a path to improve the device quality. In this paper, we report enhanced mobility of up to 540 000 cm 2 V −1 s −1 in monolayer graphene sandwiched between two layers of a CrOCl insulator through a dielectric shielding effect. The Shubnikov−de Haas quantum oscillation is also observed with the amplitude linearly decreasing with increasing temperature, consistent with the standard Lifshitz−Kosevich theory. More strikingly, this oscillation persists to a temperature as high as 100 K because of this enhanced mobility. Our work paves a way to improve the mobility of graphene and realize the nontrivial quantum states at high temperatures for the exploration of low-power-consumption device applications in electronics.

Investigation on the tunable and polarization sensitive three-band terahertz graphene metamaterial absorber

“…Bolotin et al also reported its mobility is larger than 17 m 2 V −1 s −1 in ultraclean suspended graphene at 5 K [40]. Moreover, by reducing the Coulomb interaction between electrons and charged impurities, they can substantially enhance the mobility of graphene up to 54 m 2 V −1 s −1 in monolayer graphene sandwiched between two layers of a CrOCl insulator [41]. Due to its ability to be efficiently controlled by the Fermi level and carrier mobility, graphene has the much potential applications in optical and optoelectronic devices [42].…”

Photon energy dependence of graphene oxide reduction by soft X-ray irradiation and atomic hydrogen annealing

“…2) In general, reduced GOs (r-GOs) have poorer electrical properties compared with ideal graphene. 3) Therefore, various reduction methods of hightemperature annealing, [4][5][6] chemical treatments using hydrazine, 7) and green reductants 8) have been investigated to obtain excellent electrical properties. In general, the electrical properties of graphene transferred from a Cu substrate onto a SiO 2 dielectric film are degraded by graphene wrinkles 9) and an SiO 2 underlayer.…”

Enhanced Shubnikov–de Haas Oscillations in High Mobility InAlN/GaN Two-Dimensional Electron Gas

“…Transport properties serve as a crucial tool to understand the scattering mechanisms in the two-dimensional electron gas (2DEG) channel effectively. Various characterization techniques have been employed to ensure the production of high-quality samples. − Magnetoresistance measurements in quantum transport serve as a powerful tool for characterizing compound semiconductors, facilitating a deeper understanding of their electronic properties. − Quantum oscillations and their scattering phenomena have been extensively explored in various GaN based heterostructures. ,,− However, the quantum transport behaviors in this high-mobility InAlN/GaN heterostructure have not been widely reported. In particular, study on the InAlN/GaN 2DEG systems with high mobility remains a long-standing challenge due to growth challenges.…”