Shot Noise Suppression in Quasi-One-Dimensional Field-Effect Transistors

Abstract

http://www.gianlucafiori.org/articles/betti_TED.pd

Microscopic noise simulation of long- and short-channel nMOSFETs by a deterministic approach

“…And if both are turned off, we obtain pure shot noise which tells us that there are no other effects suppressing the noise. The suppression of noise due to the Pauli principle and Coulomb interactions for various nanoscale FETs have been previously investigated and similar findings on the strong influence of potential fluctuations have been reported [26,27].…”

Carbon nanotube FET process variability and noise model for radiofrequency investigations

“…The injection of carriers over this barrier follows Poissonian statistics, which results in shot noise [15]. Mechanisms as long-range Coulomb interactions and the Pauli exclusion principle can yet introduce correlation between successive injection events [16], which leads to a reduction of the noise power spectral density (PSD) below the conventional value of 2qID. The resulting suppressed channel shot noise can be expressed as elementary charge, and ID the drain current.…”

Noise in graphene and carbon nanotube devices

“…We have developed a theory that enables us to compute shot noise through statistical simulations of randomly injected electrons from the reservoirs, described in detail in [11] and [12]. The main advantage of our approach is the capability to fully include electron-electron interaction, both through Pauli exclusion, and through the Coulomb force.…”

“…We have derived an expression based on statistical averages to extend it to electrostatic interaction between carriers, therefore including the effect of potential energy fluctuations in the device. The reader is referred to [11] and [12] for a derivation based on second quantization theory, or to [16] for an alternative derivation.…”

“…whereas the current noise spectral density is where €  is the reduced Planck constant, ΔE is the energy step, the terms t and r refer to transmission and reflections matrices (details of their definitions in [11] and [12]) Figure 1. Example of random occupation number compared with occupation factor for energy bins of 0.5 meV.…”