Noise in graphene and carbon nanotube devices

Iannaccone, Giuseppe; Betti, A.; Fiori, Gianluca

doi:10.1109/icnf.2011.5994343

Cited by 5 publications

(5 citation statements)

References 16 publications

(19 reference statements)

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“…In the case of graphene on h-BN the higher remote polar phonon energies appease the influence of this type of scattering, leading to an intermediate situation. At fields, T n would reach negative values due to the onset of negative differential mobility, and therefore it could not be defined according to equation (9), as in the case of III-V diodes [38]. In suspended graphene this condition is reached at lower fields than in graphene on substrates.…”

Section: Resultsmentioning

confidence: 99%

“…This larger corner frequency is due to a faster break of the velocity correlation at high field as a consequence of a larger amount of scattering events, particularly for optical phonons and remote polar phonons from the substrate [29]. Once that the frequency-dependent mobility and diffusion coefficient are determined, the noise temperature is directly obtained from equation (9). The results are shown in figure 3(b).…”

Section: Resultsmentioning

confidence: 99%

“…However, in this context the feasibility of GFETs for future developments of analog graphene technology will be determined not only by their operating frequencies, but especially for the noise properties of this material and its influence on device performance. Low-frequency noise has been studied by several authors in monolayer graphene [9,10] and GFETs [11][12][13]. Recently, the influence of the substrate on the 1/f noise in a GFET has also been shown, evidencing low-frequency noise suppression in the case of graphene on a substrate [14].…”

Section: Introductionmentioning

confidence: 99%

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Noise temperature in graphene at high frequencies

Rengel¹,

Iglesias²,

Pascual³

et al. 2016

Semicond. Sci. Technol.

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A numerical method for obtaining the frequency-dependent noise temperature in monolayer graphene is presented. From the mobility and diffusion coefficient values provided by Monte Carlo simulation, the noise temperature in graphene is studied up to the THz range, considering also the influence of different substrate types. The influence of the applied electric field is investigated: the noise temperature is found to increase with the applied field, dropping down at high frequencies (in the sub-THz range). The results show that the low-frequency value of the noise temperature in graphene on a substrate tends to be reduced as compared to the case of suspended graphene due to the important effect of remote polar phonon interactions, thus indicating a reduced emitted noise power; however, at very high frequencies the influence of the substrate tends to be significantly reduced, and the differences between the suspended and onsubstrate cases tend to be minimized. The values obtained are comparable to those observed in GaAs and semiconductor nitrides.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Noise temperature in graphene at high frequencies

Rengel¹,

Iglesias²,

Pascual³

et al. 2016

Semicond. Sci. Technol.

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“…Iannaccone et al developed an analytical framework for suppressed shot noise in ballistic nanoscale MOSFETs [146,147]. They express the PSD of suppressed shot noise as:…”

Section: Suppressed Channel Shot Noisementioning

confidence: 99%

“…(4.4). This work does not consider the effect of shot noise enhancement due to hole injection from the drain to bound states in the intrinsic channel [147], which occurs in low bandgap CNTs under certain biasing conditions. This effect is only relevant in the subthreshold regime and therefore of minor importance for common RF applications.…”

Section: Suppressed Channel Shot Noisementioning

confidence: 99%

Opportunities for radio frequency nanoelectronic integrated circuits using carbon-based technologies

Landauer

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This thesis presents a body of work on the modeling of and performance predictions for carbon nanotube field-effect transistors (CNFET) and graphene field-effect transistors (GFET). While conventional silicon-based CMOS is expected to reach its ultimate scaling limits during the next decade, these two novel technologies are promising candidates for future high-performance electronics. The main goal of this work is to investigate on the opportunities of using such carbon-based electronics for RF integrated circuits. This thesis addresses 1) the modeling of noise and process variability in CNFETs, 2) RF performance predictions for CNFETs, and 3) an accurate GFET compact model. This work proposes the first CNFET noise compact model. Noise is of primary importance for RF applications and its description significantly increases the insight gained from simulation studies. Furthermore, a CNFET variability model is presented, which handles tube synthesis and metal tube removal imperfections. These two model extensions have been added to the Stanford CNFET compact model and allow for the variability-aware RF performance assessment of the CNFET technology. In continuation, comprehensive RF performance projections for CNFETs are provided both on the device and circuit level. The overall set of ITRS RF-CMOS technology requirement FoMs is determined and shows that the CNFET performs excellently in terms of speed, gain, and minimum noise figure. Furthermore, for the first time FoMs are reported for the basic RF building blocks low-noise amplifier and oscillator. In addition, it is shown that CNFET downscaling yields significant performance improvements. Based on these analyses it is confirmed that the CNFET has the potential to outperform Si-CMOS in RF applications. A third key contribution of this thesis is the development of an accurate GFET compact model. Previous compact models simplify several physical aspects, which can cause erroneous simulation results. Here, an accurate yet simple mathematical description of the GFET’s current-voltage relation is proposed and implemented in Verilog-A. Comprehensive error analyses are done in order to highlight the advantages of the new approach. Furthermore, the model is verified against measurement results. The developed GFET model is an important step towards better understanding the characteristics and opportunities of graphene-based analog circuitry.

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Graphene-based sensors of NO2, H2, acetone, and other gases/vapors: State of the art and realistic outlook

Luby

Ivančo

2019

Applied Physics of Condensed Matter (Apcom 2019)

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Noise in graphene and carbon nanotube devices

Cited by 5 publications

References 16 publications

Noise temperature in graphene at high frequencies

Noise temperature in graphene at high frequencies

Opportunities for radio frequency nanoelectronic integrated circuits using carbon-based technologies

Graphene-based sensors of NO2, H2, acetone, and other gases/vapors: State of the art and realistic outlook

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