Shot noise measurements in graphene

Abstract

a b s t r a c tWe have investigated shot noise at microwave frequencies in wide-aspect-ratio graphene sheets in the temperature range of 4.2-30 K. We find that for our short (L < 300 nm) graphene samples with width over length ratio W /L > 3, the Fano factor F reaches a maximum F ∼ 1/3 at the Dirac point and that it decreases substantially with increasing charge density. Our results agree with the theoretical prediction that electrical transport at the Dirac point is governed by evanescent electronic states.

Low-frequency 1/f noise in graphene devices

“…[ [61][62][63][64][65]. An approach to re-cast McWhorter model of 1/f noise specifically for graphene was reported in Ref.…”

Nonergodicity and microscopic symmetry breaking of the conductance fluctuations in disordered mesoscopic graphene

“…Graphene also exhibits pronounced mesoscopic [9][10][11][12][13] effects -including weak localization (WL) [14][15][16][17][18][19], conductance fluctuations (CF) [20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35][36][37][38], and quantum noise [39][40][41][42][43] -with much richer characteristics than their counterparts in non-Dirac materials [9][10][11][12][13]. Most notably, while the CF in dirty metals and semiconductors are known to exhibit specific universal properties, recent studies [24,25,30,35] suggest that this universality may not extend to graphene.…”

A frequency-domain derivation of shot-noise

“…15 An active area of investigation is the level of shot noise suppression due to quantum and Coulomb interactions in mesoscopic electronic structures carrying "2D" or, more recently, "1D" currents. [16][17][18] Contrary to the case of electrons, quantum correlations among photons (which are bosons) can lead to an enhancement of shot-noise-like fluctuations exceeding the level predicted by Eq. (20), a phenomenon informally known as "photon bunching."…”