Low-frequency 1/f noise in graphene devices

Balandin, Alexander A.

doi:10.1038/nnano.2013.144

Cited by 551 publications

(610 citation statements)

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“…[18] This low-frequency 1/f noise is even more pronounced for devices that are scaled down to nanometer dimensions, where the channel current becomes more prone to fluctuations due to, particularly, interface and surface trap states. [63,64] It is the level of these unwanted fluctuations (along with the sensing response S) that determines the ultimate detection limit of GFET biosensors.…”

Section: Electrical Noise Performances Of Graphene Materialsmentioning

confidence: 99%

“…[5] The uniqueness of graphene among other solid-state materials is that all carbon atoms are located on the surface, making the graphene surface potentially highly sensitive to any changes of its surrounding environment. Along with the excellent electrical properties of graphene, [13,14] i.e., extraordinary high mobility [15,16,17] and low intrinsic electrical noise, [18][19][20][21] graphene-based electronic biosensors demonstrated greater sensitivity than traditional bioassays. [22] Additionally, graphene (at least ideal graphene) has a crystal lattice free of dangling bonds and is therefore intrinsically chemically inert.…”

Section: Introduction: Challenges and Opportunitiesmentioning

confidence: 99%

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Sensing at the Surface of Graphene Field‐Effect Transistors

et al. 2016

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Abstract. 10Recent research trends now offer new opportunities for developing the next generations of label-free biochemical sensors using graphene and other two-dimensional materials. While the physics of graphene transistors operated in electrolyte is well grounded, important chemical challenges still remain to be addressed, namely the impact of the chemical functionalizations of graphene on the key electrical parameters and the sensing performances. In fact, graphene -at least ideal graphene -is highly chemically inert. The 15 functionalizations and chemical alterations of the graphene surface -both covalently and non-covalently -are crucial steps that define the sensitivity of graphene. The presence, reactivity, adsorption of gas and ions, proteins, DNA, cells and tissues on graphene have been successfully monitored with graphene. This review aims to unify most of the work done so far on biochemical sensing at the surface of a (chemically functionalized) graphene field-effect transistor and the challenges that lie ahead. We are convinced that graphene biochemical sensors 20 hold great promises to meet the ever-increasing demand for sensitivity, especially looking at the recent progresses suggesting that the obstacle of Debye screening can be overcome.2

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Section: Electrical Noise Performances Of Graphene Materialsmentioning

confidence: 99%

Section: Introduction: Challenges and Opportunitiesmentioning

confidence: 99%

Sensing at the Surface of Graphene Field‐Effect Transistors

et al. 2016

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“…The measurements were performed in the temperature range from 300 K to 430 K in order to elucidate the physical mechanism of the low-frequency noise and determine the noise activation energies. The low-frequency noise is a ubiquitous phenomenon present in all kinds of electronic devices including field-effect transistors, diodes and interconnects [19][20][21]. The frequency dependence and temperature characteristics of the spectral density of the low-frequency noise have been used as reliability metrics for interconnects in Si complementary metal-oxide-semiconductor (CMOS) technology.…”

Section: Introductionmentioning

confidence: 99%

Low-Frequency Electronic Noise in Quasi-1D TaSe₃ van der Waals Nanowires

et al. 2016

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We report results of investigation of the low-frequency electronic excess noise in quasi-1D nanowires of TaSe3 capped with quasi-2D h-BN layers. Semi-metallic TaSe3 is a quasi-1D van der Waals material with exceptionally high breakdown current density. It was found that TaSe3 nanowires have lower levels of the normalized noise spectral density, SI/I 2 , compared to carbon nanotubes and graphene (I is the current). The temperature-dependent measurements revealed that the low-frequency electronic 1/f noise becomes the 1/f 2 -type as temperature increases to ~400 K, suggesting the onset of electromigration (f is the frequency). Using the Dutta-Horn random fluctuation model of the electronic noise in metals we determined that the noise activation energy for quasi-1D TaSe3 nanowires is approximately EP≈1.0 eV. In the framework of the empirical noise model for metallic interconnects, the extracted activation energy, related to electromigration, is EA=0.88 eV, consistent with that for Cu and Al interconnects. Our results shed light on the physical mechanism of low-frequency 1/f noise in quasi-1D van der Waals semi-metals and suggest that such material systems have potential for ultimately downscaled local interconnect applications.Keywords: quasi-1D materials; van der Waals materials; low-frequency noise; interconnects 2 | P a g e The investigations of the two-dimensional layers and heterostructures revealed new physics and demonstrated promising applications [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. Starting with graphene [3][4][5], and spreading to a wide range of layered van der Waals materials [6][7][8][9][10], successful isolation of individual atomic layers from their respective bulk crystals by mechanical exfoliation led to the fast growing research activities in the 2D materials. In contrast to the layered van der Waals materials that yield 2D crystals, materials, such as TaSe3 and TiS3 [15][16][17] yield the quasi-onedimensional (1D) van der Waals crystal structures. These materials belong to the group of the transition metal trichalcogenides MX3 (where M = Mo, W, and other transition metals; X = S, Se, Te). In the monoclinic crystal structure of TaSe3, the trigonal prismatic TaSe3 units form continuous chains extending along the b axis and leading to fiber-and needle-like crystals with anisotropic semi-metallic or metallic properties. The quasi-1D atomic threads are weakly bound in bundles by the van der Waals forces. As a consequence, the mechanical exfoliation of the MX3 crystals results not in the 2D layers but rather in the quasi-1D van der Waals nanowires. We have recently demonstrated quasi-1D TaSe3 nanowires with the record high current density exceeding JB~10 MA/cm 2 , which is an order of magnitude larger than that for the Cu interconnects [18].In this Letter, we report on the excess low-frequency electronic noise in quasi-1D nanowires of TaSe3 capped with the quasi-2D h-BN layers. The h-BN capping was used as a surface passivation protecting from environmental exposure. The measuremen...

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“…In fact, evaluating C 1Hz is a common approach to compare the noise among different nanopore devices. [25] At frequencies below 1 kHz, a wide variety of nanoscale devices exhibit flicker noise, [39] characterized by PSDs exponentially decaying with the frequency:…”

Section: Bionanotechnologymentioning

confidence: 99%

Zero‐Depth Interfacial Nanopore Capillaries

et al. 2018

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Charged molecules can translocate through the nanopore. The instant passage of the molecule momentarily impacts the conductance by locally reducing the aperture size of the channel. The resulting variations of the ionic conductance depends on the local topology of the translocating molecule; particularly, portions of long chain molecules such as polymers, proteins or DNA mark the electronic readout with specific conductance blockade fingerprints, and ultimately allow for reconstructing the sequence of monomers composing the translocating strands. [10] Consequently, thinner pores, i.e., capillaries with shorter channels, are capable of resolving shorter portions of molecules, leading for instance toward highresolution sequencing devices. [1] Thus, the challenge toward high-resolution sequencing has driven the development of ultrashort channel nanopores. Historically, two major classes of nanopores, i.e., biological and solid state nanopores, have been considered. The thickness of these nanopores varies from a few nanometers, as for α-hemolysin biological nanopores, [11,12] up to tens of nanometers for solid-state nanopores. [13] A revolutionary breakthrough aiming at reducing the capillary length of nanopores was achieved by the introduction of 2D materials such as graphene, [14][15][16] hexagonal boron nitride, [17] and molybdenum disulfide. [18][19][20][21] Indeed, the monoatomic capillary length of 2D nanopores is expected to offer sequencing capabilities, [2] but has not been realized yet. Inferior mechanical stability is one of the downsides of thin membranes inherently limiting the sustainability of 2D nanopores. Moreover, the complex fabrication process, involving cleanroom facilities and electron beam lithography, [22][23][24] can be demanding to scale up to industrial production. The noise levels in such devices are also orders of magnitude higher than those for long capillary-based nanopores, thus hindering their application for sequencing. [25] To address these issues, we introduce the concept of interfacial nanopores, generated at the crossing of two trenches, as illustrated in Figure 1. Fundamentally, the cross-section of two 1D straight lines is a zero-dimensional entity defined as a point (Figure 1a). The addition of a second dimensionality implies the overlap of two components to become a surface (Figure 1b). Similarly, in a 3D space, the interface shared between two tangent rectangular parallelepipeds is a surface, hence mathematically 2D (Figure 1c). Unlike nanopores commonly fabricated in 2D materials-which notwithstanding still possess a finite thickness-the surface defined by the crossing parallelepipeds is strictly 2D and thus does not exhibit any thickness. A High-fidelity analysis of translocating biomolecules through nanopores demands shortening the nanocapillary length to a minimal value. Existing nanopores and capillaries, however, inherit a finite length from the parent membranes. Here, nanocapillaries of zero depth are formed by dissolving two superimposed and crossing metallic nanoro...

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Low-frequency 1/f noise in graphene devices

Cited by 551 publications

References 65 publications

Sensing at the Surface of Graphene Field‐Effect Transistors

Sensing at the Surface of Graphene Field‐Effect Transistors

Low-Frequency Electronic Noise in Quasi-1D TaSe₃ van der Waals Nanowires

Zero‐Depth Interfacial Nanopore Capillaries

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Low-frequency 1/f noise in graphene devices

Cited by 551 publications

References 65 publications

Sensing at the Surface of Graphene Field‐Effect Transistors

Sensing at the Surface of Graphene Field‐Effect Transistors

Low-Frequency Electronic Noise in Quasi-1D TaSe3 van der Waals Nanowires

Zero‐Depth Interfacial Nanopore Capillaries

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Low-Frequency Electronic Noise in Quasi-1D TaSe₃ van der Waals Nanowires