Shot noise, LER, and quantum efficiency of EUV photoresists

Brainard, Robert L.; Trefonas, Peter; Lammers, Jeroen H.; Cutler, Charlotte; Mackevich, Joseph F.; Trefonas, Alexander; Robertson, Stewart A.

doi:10.1117/12.536411

Cited by 131 publications

(75 citation statements)

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“…The resist sensitivity in the model was changed by varying the base loading while keeping all other parameters fixed. We note that the base-loading method for varying sensitivity is often used in experimental studies as well [11][12][13]. The modeling results show that resist improvement relative to the photon noise limit is still possible.…”

Section: Photon Noise Limitmentioning

confidence: 88%

EUV Resists: Illuminating the Challenges

Naulleau¹,

Anderson²,

George³

2011

J. Photopol. Sci. Technol.

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Section: Photon Noise Limitmentioning

confidence: 88%

EUV Resists: Illuminating the Challenges

Naulleau¹,

Anderson²,

George³

2011

J. Photopol. Sci. Technol.

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“…If we simply assume the dose noise to go as the square root of the mean dose, a 25% reduction in noise would require a 56% increase in dose. This arguably represents the "shot noise limit" [8][9][10][11][12][13][14][15][16][17][18][19]], yet we find that by biasing the CD by 2 nm we significantly outperform this "limit". Figure 11 shows the corresponding PDFs for the original case in Fig.…”

Section: Predicting Error Ratesmentioning

confidence: 90%

Understanding Extreme Stochastic Events in EUV Resists

Naulleau

Bhattarai²,

Neureuther³

2017

J. Photopol. Sci. Technol.

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The problem of stochastics in photoresist patterning is of significant concern in the commercialization of extreme ultraviolet lithography, especially in patterning of contacts or vias. Traditionally, contact hole critical dimension (CD) variability is characterized as a Gaussian process, however, recent experimental results have demonstrated significant deviations from Gaussian statistics, especially on the small CD side. Modeling results show that this non-Gaussian variation is expected and can be attributed to the non-linear behavior of the contact hole exposure latitude as a function of dose. It is shown that if we consider the noise in the dose or sensitivity domain, it can still be treated as a Gaussian process. The CD statistics are then determined by mapping the Gaussian dose/sensitivity noise through the non-linear and deterministic CD versus dose function.

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“…The largest improvement in Z-Parameter occurs at low PEB temperatures. Using a PEB of 90 °C, the Z-Parameter of OS1 improves from 7.4 × 10 -7 mJ·nm 3 to 5.4 × 10 -7 mJ·nm 3 and 2.5 × 10 -7 mJ·nm 3 for 3HB and 6AB, respectively. The Z-Parameter uncertainties are ≈ ± 25 % which follows from the uncertainty in LER (± 0.5 nm), Dose (± 10 %) and resolution (± 0.5 nm).…”

Section: Z-parameter As a Function Of Temperaturementioning

confidence: 98%