Lithography and Chemical Modeling of Acid Amplifiers for Use in EUV Photoresists

Kruger, Seth; Higgins, Craig; Gallatin, Cregg; Brainard, Robert L.

doi:10.2494/photopolymer.24.143

Cited by 7 publications

(8 citation statements)

References 20 publications

(1 reference statement)

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“…A wide range of AA structures has been examined for efficacy in lithographic applications. 30 In-depth studies probing the influence of AA structure on photoacid yield and lithographic performance have been reported by the Brainard and coworkers, [31][32][33][34][35] where they establish the key attributes of an effective amplifier (e.g., acid pK a , thermal stability, and relative reactivity).…”

Section: Acid Amplifiersmentioning

confidence: 99%

Contribution of EUV resist counting statistics to stochastic printing failures

Hinsberg

Wallraff

Sanchez

et al. 2021

J. Micro/Nanopattern. Mats. Metro.

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Background: Stochastic printing failures, manifested as random defects in a patterned photoresist image, result from statistical fluctuations in photon flux and resist components and are a key issue confronting extreme ultraviolet (EUV) lithography. Empirical data indicate that photoresist composition and processing influence stochastic printing failure rates. Aim: To devise a simple and flexible model framework for assessing how changes in photoresist composition and imaging chemistry can be expected to impact the frequency of stochastic printing failures Approach: A simple physicochemical description based solely on resist component and photon statistics is combined with combinatorial calculations of resist imaging chemistry and Monte Carlo analysis to estimate rates of random printing failures. Results: This model yields results consistent with experimental observations. The method is applied to predict impacts of resist formulation, composition, and process changes on the rates of stochastic printing failures. Conclusions: This approach provides rapid assessment of the relative impact of resist materials and process modifications and is useful as a tool to advance EUV photoresist design.

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Section: Acid Amplifiersmentioning

confidence: 99%

Contribution of EUV resist counting statistics to stochastic printing failures

Hinsberg

Wallraff

Sanchez

et al. 2021

J. Micro/Nanopattern. Mats. Metro.

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“…The residue was purified using column chromatography (TEOS/chloroform 5 1/100, then chloroform) to give the PBG monomer 3 in a 78% yield (9.1 g) as a pale-yellow crystal. 1 [6][7][8] and stirred for 10 min at 0 C. Aqueous hydrochloric acid was added to the solution, stirred at room temperature for another 10 min, and then stirred at 70 C for 1-1.5 h under flowing N 2 (300-360 mL min 21 ). The residue was dissolved in THF, and dropped into hexane or cyclohexane to give the silicone resins as a pale-yellow or white solid.…”

Section: Synthesis Of Pbg Monomermentioning

confidence: 99%

“…Photosensitive polymers are indispensable for this process as photoresists to protect metal surfaces while being subjected to an etching process. [1][2][3][4][5] To accomplish high photosensitivity, various chemical amplification systems have been developed in which photogenerated acid 6,7 or base [8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23] catalyses a chemical reaction in a resist film. While photosensitive materials based on basecatalysed reactions have merit for preventing erosion of metallic substrates, photobase generators generally have low quantum yields, which leads to low photosensitivity.…”

mentioning

confidence: 99%

Base-amplifying silicone resins with photobase-generating side chains and their application to negative-working photoresists

Furutani

Kobayashi

Gunji

et al. 2015

J. Polym. Sci. Part A: Polym. Chem.

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To accomplish high photosensitivity of resist systems including photobase generators, we have proposed the concept of base‐proliferation reactions that generate base molecules in a nonlinear manner by the action of a catalytic amount of base; however, excessive diffusion of generated base molecules is still a problem. We have designed novel functional silicone resins bearing both base‐amplifying units and photobase‐generating units, and synthesized resins with various composition ratios. The synthesized resins are decomposed autocatalytically after UV irradiation and subsequent heating at 100 °C, which indicates progression of base‐proliferation reactions. High photosensitivity (8.1 mJ cm−2) was recorded, and it was found that the photosensitivity is about 490 times enhanced by replacing a base‐catalytic reaction system with the base‐proliferation reaction system. Furthermore, a 4 × 10 µm line‐and‐space pattern has been successfully fabricated using the silicone resin. © 2015 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2015, 53, 1205–1212

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“…Self Aligned Double Patterning [4] for 3x nm and 2x nm. Further size reduction requires triple or quadruple patterning, and it causes huge increase of CoO and the difficulty of overlay [5] Extreme ultraviolet (EUV) lithography has been the favorite candidate of successor of immersion ArF [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24] [26][27][28][29][30][31][32][33][34]. Application of DSA materials may extend immersion ArF and support the rise of EUV.…”

Section: Introductionmentioning

confidence: 99%

Directed Self Assembly Material Development for Fine Patterning and Pattern Repair

Minegishi¹,

Namie²,

Izumi³

et al. 2013

J. Photopol. Sci. Technol.

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The Directed Self-Assembly (DSA) method is becoming a key complementary technology for enabling lithographic pattern feature shrinkage. Recent DSA technology has developed remarkable improvements in many aspects of materials and process. Polystyreneb-polymethylmethacrylate (PS-b-PMMA) block copolymer (BCP) is a typical material used in DSA, but more advanced materials are required for achieving patterning less than 10 nm in size. High-χ block copolymers are being researched as next generation PS-b-PMMA material successors. Polymers with high-χ produce smaller pattern sizes than PS-b-PMMA. However, doing DSA with these high-χ materials requires a special method to separate one phase of BCPsuch as phase separation in solvent. We have done further research to improve high-χ materials to enable better DSA technology. Here we report 8.4 nm half-pitch line patterns were formed with our high-χ block co-polymer, annealing under air. DSA is a candidate for next generation lithography. However, DSA materials are not used alone. DSA materials are always used with guide pattern to "direct" self assembly materials. Currently ArF resist is well studied as guide pattern. ArF resist is extended to use further generation, but the required resolution level is already severe for 193nm patterning. Employment of blend DSA could improve the ArF pattern profile.

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Lithography and Chemical Modeling of Acid Amplifiers for Use in EUV Photoresists

Cited by 7 publications

References 20 publications

Contribution of EUV resist counting statistics to stochastic printing failures

Contribution of EUV resist counting statistics to stochastic printing failures

Base-amplifying silicone resins with photobase-generating side chains and their application to negative-working photoresists

Directed Self Assembly Material Development for Fine Patterning and Pattern Repair

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