Short-circuit evaluation and overcurrent protection for SiC power MOSFETs

Awwad, Abdullah Eial; Dieckerhoff, Sibylle

doi:10.1109/epe.2015.7311701

Cited by 64 publications

(29 citation statements)

References 8 publications

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“…In [4], SiC MOSFEts have shown high junction operation temperature capabilities (i.e., beyond 250 • C ) for long-term reliability, nevertheless, the short circuit capability has proven to be equivalent to its silicon counterparts. Additionally, the Short Circuit Safe Operation Area (SCSOA) of the latest discrete 1.2 kV SiC MOSFET devices have been lately investigated, evidencing a large variation between different manufacturers (i.e, typically Cree, Rohm, GE) [5]- [7] and testing conditions (i.e., DC link voltage, case temperature, and gate voltage) [8], [9], [13]. Other studies have focused on the development of an electro-thermal model for predicting the SCSOA, including failure time and simulated junction temperature at different testing conditions, such as those in [10], [14].…”

Section: Introductionmentioning

confidence: 99%

A Short-Circuit Safe Operation Area Identification Criterion for SiC MOSFET Power Modules

Reigosa

Iannuzzo

Luo

et al. 2017

IEEE Trans. on Ind. Applicat.

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Section: Introductionmentioning

confidence: 99%

A Short-Circuit Safe Operation Area Identification Criterion for SiC MOSFET Power Modules

Reigosa

Iannuzzo

Luo

et al. 2017

IEEE Trans. on Ind. Applicat.

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“…In the literature, some values of crit at specific boundary conditions can also be found in [2][3][4][5][6][7][8] with devices of the same chip generations and manufacturer. They are in accordance with the displayed results in this article but often there is only one value of crit at completely different operating points or without concrete testing conditions given.…”

Section: Resultsmentioning

confidence: 99%

“…At the same time, reliability of these devices under harsh operating conditions is still an issue [2][3][4][5][6][7][8]. One of its most important issues is the short-circuit (SC) robustness against single or repetitive faults events and overcurrent conditions.…”

Section: Introductionmentioning

confidence: 99%

A Structural Based Thermal Model Description for Vertical SiC Power MOSFETs under Fault Conditions

Maerz

Bertelshofer

Bakran

2016

Active and Passive Electronic Components

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The accurate prediction of the SiC MOSFET withstanding time for single fault events greatly influences the requirements for device protection circuits for these devices in power converter applications, like voltage source inverters or power electronic transformers. For this reason, a thermal model, based on the structural design and the physical dimensions of the chip as well as material properties of 4H-SiC, is proposed. This article gives a general description of the thermal behaviour of vertical SiC MOSFET under various driving and boundary conditions in case of a short-circuit event. The thermal model substitutes destructive tests of a device for an individual set of boundary conditions of an occurring fault event. The validity of the analytically parametrised thermal model is verified by experimental short-circuit tests of state-of-the-art vertical SiC MOSFETs for a set of various boundary conditions. The investigated thermal model can furthermore be used to standardise different gate-oxide degradation values from the literature for means of lifetime prediction of the gate oxide for an individual application under repetitive occurring fault or overload conditions. These manufacturer specific reported values measured with no standardised testing procedures can be translated into a maximum junction temperature, which is repeatedly reached. The thermal model therefore provides a unifying parameter for the gate-oxide lifetime calculation for an individual chip and application.

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“…Then, the short-circuit current will be further increased. Therefore, Ugs must be clamped in the short-circuit condition to inhibit the peak of the short-circuit current [33]. In which, U D1 is the forward voltage drop of the diode D 1 , U Z1 is the reverse steady-state voltage of Zener diode Z 1 , and U ds is the drain-source voltage of the SiC MOSFET.…”

Section: Clamping the Gate-source Voltagementioning

confidence: 99%

A Digital-Controlled SiC-Based Solid State Circuit Breaker with Soft Switch-Off Method for DC Power System

Qin

Xun

et al. 2019

Electronics

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Due to the lower on-state resistance, direct current (DC) solid state circuit breakers (SSCBs) based on silicon-carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) can reduce on-state losses and the investment of the cooling system when compared to breakers based on silicon (Si) MOSFETs. However, SiC MOSFETs, with smaller die area and higher current density, lead to weaker short-circuit ability, shorter short-circuit withstand time and higher protection requirements. To improve the reliability and short-circuit capability of SiC-based DC solid state circuit breakers, the short-circuit fault mechanisms of Si MOSFETs and SiC MOSFETs are revealed. Combined with the desaturation detection (DESAT), a “soft turn-off” short-circuit protection method based on source parasitic inductor is proposed. When the DESAT protection is activated, the “soft turn-off” method can protect the MOSFET against short-circuit and overcurrent. The proposed SSCB, combined with the flexibility of the DSP, has the μs-scale ultrafast response time to overcurrent detection. Finally, the effectiveness of the proposed method is validated by the experimental platform. The method can reduce the voltage stress of the power device, and it can also suppress the short-circuit current.

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Short-circuit evaluation and overcurrent protection for SiC power MOSFETs

Cited by 64 publications

References 8 publications

A Short-Circuit Safe Operation Area Identification Criterion for SiC MOSFET Power Modules

A Short-Circuit Safe Operation Area Identification Criterion for SiC MOSFET Power Modules

A Structural Based Thermal Model Description for Vertical SiC Power MOSFETs under Fault Conditions

A Digital-Controlled SiC-Based Solid State Circuit Breaker with Soft Switch-Off Method for DC Power System

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