2019
DOI: 10.3390/electronics8080837
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A Digital-Controlled SiC-Based Solid State Circuit Breaker with Soft Switch-Off Method for DC Power System

Abstract: Due to the lower on-state resistance, direct current (DC) solid state circuit breakers (SSCBs) based on silicon-carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) can reduce on-state losses and the investment of the cooling system when compared to breakers based on silicon (Si) MOSFETs. However, SiC MOSFETs, with smaller die area and higher current density, lead to weaker short-circuit ability, shorter short-circuit withstand time and higher protection requirements. To improve the relia… Show more

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Cited by 8 publications
(4 citation statements)
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“…15keV, 3X10 13 cm -2 50keV, 6X10 13 cm -2 100keV, 8X10 13 cm -2 170keV, 9X10 13 The distance between the P+ anode and N+ gate, l space , was optimized at 10 µm, as a built-in potential cannot be established between the P+ anode (emitter) and N base of a PNP BJT if l space is short. The parameters t drift and N drift represent the thickness and doping concentration of the P-drift region, respectively.…”
Section: Depth (μM)mentioning
confidence: 99%
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“…15keV, 3X10 13 cm -2 50keV, 6X10 13 cm -2 100keV, 8X10 13 cm -2 170keV, 9X10 13 The distance between the P+ anode and N+ gate, l space , was optimized at 10 µm, as a built-in potential cannot be established between the P+ anode (emitter) and N base of a PNP BJT if l space is short. The parameters t drift and N drift represent the thickness and doping concentration of the P-drift region, respectively.…”
Section: Depth (μM)mentioning
confidence: 99%
“…The thermal conductivity of 4H-SiC is 3.3-4.9 W cm −1 K −1 , which is also greater than that of Si, which is 1.4-1.5 W cm −1 K −1 . Therefore, 4H-SiC is well-suited for use in power switches [8][9][10][11][12][13][14]. Recently, various research results related to the SiC power devices have been published.…”
Section: Introductionmentioning
confidence: 99%
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“…D FW partly alleviates the overvoltage when inductive loads are switched off. In [25] a new "soft turn-off" technique is proposed in order to reduce the voltage overshoot and short circuit peak current. In this work, the use of Digital Signal Processor to control the operation of the SSCB also allows other enhanced protection functions.…”
Section: Setup and Main Transistor Robustnessmentioning
confidence: 99%