Short and long-term stability problems of Hall plates in plastic packages

Manić, D.; Petr, Jan; Popović, R.S.

doi:10.1109/relphy.2000.843919

Cited by 20 publications

(6 citation statements)

References 9 publications

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“…Thus, combining the outputs of the spinning phases i [8], the offset gets cancelled or minimized, as the sensor is not fully symmetrical due to mask misalignments, stress and variations in piezo-resistance [6]. From the output of the sensor, the signal is amplified by the front-end (A FE ) and then demodulated in the output buffer (A SD ).…”

Section: A Operating Principlementioning

confidence: 99%

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A Fully Integrated Hall Sensor Microsystem for Contactless Current Measurement

Ajbl,

Pastre,

Kayal

2013

IEEE Sensors J.

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Contactless current measurement based on Halleffect sensors can be performed in either closed-or open-loop configuration. In this paper an open-loop sensor system with a current-mode output is described. The system measures the magnetic field induced around the current path targeting high linearity, accuracy, and speed. As the accuracy of the Hall sensor microsystem is affected by temperature-dependent offset and sensitivity of the sensing element, system-level solutions are developed to minimize these effects. The full system integration represents a design challenge as both voltage and current references are directly involved in the sensitivity calibration and both contribute to the system sensitivity drift. The measurements show a sensitivity drift lower than 80 ppm/°C, the offset drifts less than 300 nT/°C and the nonlinearity is less than ±0.08%. The effects of the varying external field on the calibration loop are analyzed and the theoretical prediction is validated by measurement.Index Terms-Current output, full integration, Hall-effect sensor, sensitivity calibration.

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Section: A Operating Principlementioning

confidence: 99%

“…The core of the sensor system (shaded) contains a Hall sensor, the analog front-end and the output buffer. As the sensor is not fabricated in an optimized process, its performance is strongly affected by temperature, stress and aging [6], [7]. Thus the sensor system exhibits non-negligible offset and sensitivity drifts.…”

Section: Introductionmentioning

confidence: 99%

A Fully Integrated Hall Sensor Microsystem for Contactless Current Measurement

Ajbl,

Pastre,

Kayal

2013

IEEE Sensors J.

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“…The relation between the electric fieldẼ; the current densityJ and the magnetic flux densityB in a cubic crystal like silicon can be expressed as (Fischer et al 2004;Manic et al 2000):…”

Section: Introductionmentioning

confidence: 99%

The influence of package-induced stresses on moulded Hall sensors

Fischer

Beyer²,

Janke³

et al. 2005

Microsyst Technol

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The output signals of moulded Hall sensors show changes in offset and sensitivity when the devices are affected by changing temperatures. This behaviour is a result of the differences in the thermal expansion behaviour of the package materials and is also affected by their time-dependent, viscous material properties. The stresses affected to the sensor's sensitive layer will become effective via the piezo-Hall-effect as well as via piezo-resistivity which both change the sensitivity and the offset of the sensor's output voltage. For modelling the stress in the sensitive area correctly it is indispensable to consider the visco-elastic and the visco-plastic behaviour of the materials constituting the package. Especially for very accurate sensors or components operating in harsh environments these effects must be regarded. In this work we investigate the thermomechanical stresses, which are induced in the sensitive layer of a moulded Hall sensor during the assembly process, the investigations were based mainly on finiteelements-simulations.

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“…Variations of the temperature cause a change of magnetic sensitivity via the temperature dependent mobility and Hall scattering factor [8]. Moreover, a change of the environmental conditions of packaged Hall sensors, i.e., temperature, humidity [9], [10], and cyclic loads [11] lead to a change of the package stress and consequently lead to a change of the sensitivity [5], [12]. An optimized assembly process can help to decrease the stress-related sensitivity drift of Hall sensors [13], [14].…”

mentioning

confidence: 99%

Package Stress Monitor to Compensate for the Piezo-Hall Effect in CMOS Hall Sensors

Huber¹,

Schott²,

Oliver

2013

IEEE Sensors J.

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Package-induced stress changes the sensitivity of planar Hall plates via the piezo-Hall effect. In this paper, we present a novel stress sensor that allows us to compensate for this undesired mechanical cross-sensitivity. The new CMOScompatible sensor is based on a Wheatstone bridge built of eight appropriately arranged n-and p-doped piezoresistors. The differential output signal V bridge of the sensor is proportional to the sum of in-plane normal stresses σ x x +σ yy with the sensitivity S bridge,σ = ∂ V bridge / V bias /∂ σ x x + σ yy = −0.047GPa −1 . Doping concentrations larger than 10 19 cm −3 for both the n-and p-type resistors are used to minimize the parasitic resistor mismatch due to the junction field effect. Simultaneously, the highly doped resistors keep the relative thermal cross-sensitivity of the sensor as small as 74 ppm K −1 . In contrast to conventional sensor rosettes, the new sensor has the advantage of offering a differential output signal. The measured signal is successfully used to decrease the stress-impact on the sensitivity of CMOS Hall sensors by a factor of five.

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Short and long-term stability problems of Hall plates in plastic packages

Cited by 20 publications

References 9 publications

A Fully Integrated Hall Sensor Microsystem for Contactless Current Measurement

A Fully Integrated Hall Sensor Microsystem for Contactless Current Measurement

The influence of package-induced stresses on moulded Hall sensors

Package Stress Monitor to Compensate for the Piezo-Hall Effect in CMOS Hall Sensors

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