Shielded silicon gate complementary MOS integrated circuit

The electrical resistivity of polycrystalline silicon films has been studied as a function of doping concentration and heat treatment. The films were grown by the chemical vapor decomposition of silane on oxidized silicon wafers. The resistivity of the as−deposited films was widely scattered but independent of dopant atom concentration at the lightly doped levels and was strong function of dopant level in the more heavily doped regions. Postdeposition heat treatments in an oxidizing atmosphere remove scatter in the data. The resultant resistivity for dopant levels less than 1016 atoms/cm3 was approximately equal to that of intrinsic silicon. In the next 2 orders of magnitude increase in dopant level, the resistivity dropped 6 orders of magnitude. A model, based on high dopant atom segregation in the grain boundaries, is proposed to explain the results.

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Annealing characteristics of boron- and phosphorus-implanted polycrystalline silicon

Seto

1976

Journal of Applied Physics

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Articles you may be interested inStudy of the annealing kinetic effect and implantation energy on phosphorus-implanted silicon wafers using spectroscopic ellipsometry Polycrystalline silicon films implanted with 1 X 10 1 ' to 7.8 X 10 15 /cm' doses of boron and phosphorus were isochronally annealed up to lIOO'C. Annealing below 6OO'C removes the radiation damage created by the implantation process. For doses higher than 1 X 10 14 /cm' an abrupt decrease in sheet resistance takes place between 650 and 700 'C. Hall measurements show that this decrease is the result of a large increase in both the carrier concentration and mobility. Electron-reflection diffraction patterns show that recrystallization takes place within this temperature range. Annealing above 700'C only causes a small further decrease in the sheet resistance.

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Shielded silicon gate complementary MOS integrated circuit

Cited by 12 publications

References 4 publications

Metal Oxide Semiconductor (MOS) Field-Effect Transistors

Metal Oxide Semiconductor (MOS) Field-Effect Transistors

Dependence of resistivity on the doping level of polycrystalline silicon

Annealing characteristics of boron- and phosphorus-implanted polycrystalline silicon

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