Shaping the future of nanoelectronics beyond the Si roadmap with new materials and devices

Abstract

The use of high mobility channel materials such as Ge and III/V compounds for CMOS applications is being explored. The introduction of these new materials also opens the path towards the introduction of novel device structures which can be used to lower the supply voltage and reduce the power consumption. The results illustrate the possibilities that are created by the combination of new materials and devices to allow scaling of nanoelectronics beyond the Si roadmap.

Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer

“…III/V semiconductor nanostructures are the subject of increasing interest for device applications as researchers seek to overcome the intrinsic material limitations of Si while continuing device scaling and taking advantage of novel properties available at the nanoscale. − However, the high surface-to-volume ratio of such nanostructures makes effective surface passivation critical for many device applications, and passivation of III/V surfaces has historically proven far from trivial. − In this work, we aim to address this problem for the case of InP, a technologically important III/V semiconductor with applications in a variety of electronic and optoelectronic devices. InP is notable for its high electron mobility and velocity, ease of integration with important ternary and quaternary III/V compounds (including In 0.53 Ga 0.47 As and In x Ga 1 –x As y P 1– y ), and direct bandgap of 1.34 eV which is ideal for photovoltaic applications.…”