Oxidation and etching behaviors of the InAs surface in various acidic and basic chemical solutions

Na, Jihoon; Lee, Seunghyo; Lim, Sangwoo

doi:10.1016/j.susc.2017.01.002

Cited by 9 publications

(1 citation statement)

References 22 publications

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“…This finding suggests that the H 2 O 2 may exceptionally suppress surface oxidation on GaSb depending on the pH range of the aqueous solution. The oxidation and etching behaviors of InAs surface in various acidic and basic solutions were also investigated [3]. As one can see from Fig.…”

Section: Resultsmentioning

confidence: 99%

Toward the Surface Preparation of InGaAs for the Future CMOS Integration

Lim

2018

SSP

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The integration of III-V and Ge materials on Si surface causes many issues with complexity such as lattice mismatch with silicon. In particular, the surface preparation and passivation of InGaAs is very challenging, because the formation of InGaAs/high-K interface is important, but not well understood. For the systematical study of InGaAs surface during wet processes, the effect of various wet etching processes on the surfaces of binary III-V compound semiconductors (GaAs, InAs, GaSb and InSb) was studied from the viewpoints of surface oxidation, material loss (dissolution), and passivation. Based on that, further effort to understand the surface reactions on ternary InGaAs compound semiconductor was made. In addition, process sequential effect on the InGaAs surface was investigated.

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Section: Resultsmentioning

confidence: 99%

Toward the Surface Preparation of InGaAs for the Future CMOS Integration

Lim

2018

SSP

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Improvement the InAs, InSb, GaAs and GaSb surface state by nanoscale wet etching

et al. 2021

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Various experimental approaches of the wet nanoscale treatment have been proposed to account for features of the InAs, InSb and GaAs, GaSb semiconductor dissolution process in the (NH4)2Cr2O7–HBr–EG etching solution. Etching kinetics data showed that a crystal dissolution has diffusion-determined nature. The lowering of the solvent concentration from 80 to 0 vol.% in the solution was accompanied by a significant increase in the semiconductor etching speed. Depending on the solution composition, we have studied two types of crystal surface morphology, polished and passivated by the film, which was formed after chemical-dynamic (CDP) and/or chemical-mechanic polishing (CMP) in the solution, saturated by solvent and by oxidant, accordingly. It was found that in the polished etchants both CDP and CMP procedures lead to the formation of the mirror-like and super-smooth surface with nanoscale roughness less than 1 nm. The obtained results of surface state indicate that the (NH4)2Cr2O7–HBr–EG etchants could be used successfully for controllable CDP and CMP treatment of III–V semiconductors and formation of super-smooth surface.

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