Shallow oxygen-related donors in bonded and etchback silicon on insulator structures

Defects in Si3N4 films formed by low‐pressure chemical vapor deposition (LPCVD) were investigated by election spin resonance measurement. At room temperature, no electron spin resonance signal was observed in as‐deposited films. When the films were illuminated by ultraviolet ray (UV), signals of dangling bonds of Si (Si‐DB, N3  Si) are detected, where the g‐values were 2.0028 and the half‐value width was 14 G. This means there are N vacancies of weak Si: Si bonds (N3  Si : Si  N3) and/or dipolar‐type defects (N3  Si : Si  N3) caused by redistribution of electrons in N vacancies which cause pairs of defects (N3  Si:−, +Si  N3) by UV illumination. It is proposed that these vacancies can become dipolar‐amphoteric charge‐trapping centers of electrons and holes. The trap density and the charge‐trapping behaviors were investigated by evaluating the characteristics of MNOS nonvolatile memory devices with Si3N4 gate dielectrics.

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Negative bias-temperature instabilities in metal–oxide–silicon devices with SiO2 and SiOxNy/HfO2 gate dielectrics

Zhou

Tsetseris

Rashkeev

et al. 2004

Applied Physics Letters

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Negative bias-temperature instability (NBTI) in metal–oxide–semiconductor capacitors with SiOxNy/HfO2 gate dielectrics is compared to those with thermal SiO2 oxides. Activation energies for interface and oxide-trap charge densities for each device type, estimated from capacitance–voltage measurements versus temperature and electric field, lie in the range 0.2–0.4 eV. This suggests that the release of hydrogen from, e.g., oxide protrusions in Si, followed by the lateral motion of protons along the interface (activation energy ∼0.3 eV), may play a key role in NBTI. Passivation reactions between protons and Si–H can create interface traps, and proton capture by sub-oxide bonds (O vacancies) can lead to positive trapped-oxide charge.

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Shallow oxygen-related donors in bonded and etchback silicon on insulator structures

Cited by 5 publications

References 18 publications

Semiconductor–Insulator–Semiconductor Structures

Semiconductor–Insulator–Semiconductor Structures

Investigation of charge‐trapping centers in low‐pressure chemical vapor deposition Si₃N₄ thin films

Negative bias-temperature instabilities in metal–oxide–silicon devices with SiO2 and SiOxNy/HfO2 gate dielectrics

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Shallow oxygen-related donors in bonded and etchback silicon on insulator structures

Cited by 5 publications

References 18 publications

Semiconductor–Insulator–Semiconductor Structures

Semiconductor–Insulator–Semiconductor Structures

Investigation of charge‐trapping centers in low‐pressure chemical vapor deposition Si3N4 thin films

Negative bias-temperature instabilities in metal–oxide–silicon devices with SiO2 and SiOxNy/HfO2 gate dielectrics

Contact Info

Product

Resources

About

Investigation of charge‐trapping centers in low‐pressure chemical vapor deposition Si₃N₄ thin films