Abstract:Defects in Si3N4 films formed by low‐pressure chemical vapor deposition (LPCVD) were investigated by election spin resonance measurement. At room temperature, no electron spin resonance signal was observed in as‐deposited films. When the films were illuminated by ultraviolet ray (UV), signals of dangling bonds of Si (Si‐DB, N3 Si) are detected, where the g‐values were 2.0028 and the half‐value width was 14 G. This means there are N vacancies of weak Si: Si bonds (N3 Si : Si N3) and/or dipolar‐type defect… Show more
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