Shallow Donor Electrons in Silicon. I. Hyperfine Interactions from ENDOR Measurements

Hale, Edward B.; Mieher, Robert Lee

doi:10.1103/physrev.184.739

Cited by 103 publications

(62 citation statements)

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“…The individual hyperfine couplings between 29 Si nuclei and a donor-bound electron are known from early work in bulk samples [19,[32][33][34][35][36]. By adapting metrology techniques demonstrated for 31 P [37], we can narrow down the possible locations of the 29 Si atom measured here.…”

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confidence: 99%

“…The line shift to lower frequencies indicates instead a |⇓ polarization, since 29 Si has a negative gyromagnetic ratio γ Si = −8.458 MHz/T (Ref. 19). Several papers have discussed nuclear polarization with anomalous direction, but under conditions that do not apply to our experiment [20][21][22][23][24].…”

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confidence: 99%

“…3f, fitted with an exponential function (Color online) Atomistic modeling to match the experimental hyperfine coupling. Plotted are the 29 Si nuclear spins with known hyperfine couplings [19]. The color-scale indicates the hyperfine interaction at each site, rescaled to reflect the distorted donor electron wavefunction in our specific device.…”

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“…19) are their respective gyromagnetic ratios. We assume that the electron-29 Si interaction A Si is dominated by a contact hyperfine term, i.e.…”

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Coherent Control of a SingleSi29Nuclear Spin Qubit

et al. 2014

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Magnetic fluctuations caused by the nuclear spins of a host crystal are often the leading source of decoherence for many types of solid-state spin qubit. In group-IV materials, the spin-bearing nuclei are sufficiently rare that it is possible to identify and control individual host nuclear spins. This work presents the first experimental detection and manipulation of a single 29 Si nuclear spin. The quantum non-demolition (QND) single-shot readout of the spin is demonstrated, and a Hahn echo measurement reveals a coherence time of T2 = 6.3(7) ms -in excellent agreement with bulk experiments. Atomistic modeling combined with extracted experimental parameters provides possible lattice sites for the 29 Si atom under investigation. These results demonstrate that single 29 Si nuclear spins could serve as a valuable resource in a silicon spin-based quantum computer.The presence of non-zero nuclear spins in a host crystal lattice is known to induce decoherence in a central spin qubit through mechanisms such as spectral diffusion [1]. This "nuclear bath" is the primary source of decoherence for 31 P electron and nuclear spin qubits in silicon [2,3], nitrogen-vacancy (NV) centers in diamond [4], as well as for GaAs-based quantum dot spin qubits [5,6]. However, for semiconductors composed of majority spin-zero isotopes (such as silicon and carbon), the low abundance of spin-carrying nuclei allows to resolve the hyperfine couplings of individual nuclei with a central electronic spin, permitting the detection and manipulation of single nuclear spins. This has led to the demonstration of a quantum register for the spin of a NV center in diamond, where the electronic spin state can be stored in individual nuclei [7] and read out in single shot [8]. Quantum error correction protocols have been implemented within these nuclear spin registers [9,10], showing their potential to implement surface-code based quantum computing architectures [11]. Natural silicon contains a 4.7% abundance of the spin-carrying (I = 1/2) 29 Si isotope which, in combination with a localized electron spin, could in principle be used as quantum register or ancilla qubit equivalently to 13 C in NV-diamond. In addition, the 29 Si nuclear spin has itself been championed as a quantum bit in an "allsilicon" quantum computer [12,13].Here we present the first experimental demonstration of single-shot readout, coherent control, and measurement of the coherence properties of an individual 29 Si nuclear spin in natural Si. All measurements were performed with a magnetic field B 0 = 1.77 T, in a dilution refrigerator with electron temperature T el ≈ 250 mK. This work follows from previous experiments where the electron [2] and nuclear [3] spins of a single 31 P donor were detected using a compact nanoscale device [14] consisting of ion-implanted phosphorus donors [15], tunnel-coupled to a silicon MOS single- electron transistor (SET) [16]. Spin control was achieved through microwave and RF excitations generated by an arXiv:1408.1347v1 [cond-mat.mes-hall]

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confidence: 99%

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confidence: 99%

“…19) are their respective gyromagnetic ratios. We assume that the electron-29 Si interaction A Si is dominated by a contact hyperfine term, i.e.…”

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Coherent Control of a SingleSi29Nuclear Spin Qubit

et al. 2014

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“…The actual choice of the suitable ENDOR technique depends on the system; Fig. 3 presents the comparison of transient and stationary ENDOR techniques as applied to the same system of the arsenic donor in silicon [1,2].…”

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Characterization of Defect Centres in Semiconductors by Advanced ENDOR Techniques

1991

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The advanced magnetic resonance techniques and their application to the studies of defects in semiconductors will be reviewed. Transient and stationary ENDOR, opticalły detected ENDOR and doubłe ENDOR variations will be briefly discussed while special attention will be given to the Field-Stepped-ENDOR technique. The successful application of the advanced ENDOR techniques for the structure determination of complex defects will be illustrated by the examples concerning the boron-vacancy complex and thermal donors in silicon and the gallium vacancy in gallium phosphide.

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The Microscopic and Electronic Structure of Shallow Donors in SiC

Greulich‐Weber

1998

phys. stat. sol. (b)

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Nitrogen donors in 6H-, 4H-and 3C-SiC were investigated using conventional electron paramagnetic resonance (EPR) and electron nuclear double resonance (ENDOR) and the experimental results are discussed. An attempt is presented to interpret the experimentally found large differences in hyperfine interactions of the 14 N nuclei on the various inequivalent sites in the different polytypes of SiC in terms of valley±orbit splitting and ªcentral-cell correctionsº in the framework of the effective mass theory (EMT). Phosphorus doping by neutron transmutation in 6H-SiC resulted in various phosphorus-related EPR spectra previously associated with shallow phosphorous donors and phosphorus±vacancy complexes. In analogy to the new interpretation of the nitrogen donor spectra in various polytypes, it is proposed that all phosphorus-related spectra found hitherto in 6H-SiC are due to isolated phosphorus donors in ground and excited EMT states.Introduction. Silicon carbide has recently received considerable attention because of its applications for high temperature electronics, as a wide band gap material for optoelectronics and as a substrate for the epitaxial growth of nitrides such as GaN for blue LEDs and blue lasers. For the applications of SiC it is essential to control and understand the shallow donors and acceptors. The most prominent shallow donor is nitrogen, which is inadvertently incorporated into Lely-grown SiC. It was identified first by electron paramagnetic resonance (EPR) on the two quasi-cubic and the hexagonal sites in 6H-SiC [1] and meanwhile investigated in detail with infrared (IR) absorption spectroscopy [2,3]. There is very little knowledge about other donors. In our samples phosphorus, another very promising donor, was introduced by neutron transmutation into 6H-SiC. Until now EPR spectra of two different P-related defects were observed [4,5]. However, only one of the two defects can be due to the isolated P donor. Apart from these more practical questions, there is a fundamental aspect making the investigation of shallow donors particularly interesting and challenging in SiC: The same ªchemicalº impurity is incorporated in various inequivalent sites in different sublattices (Si or C) and in different SiC polytypes, a situation which is not paralleled in other semiconductors such as silicon or the III±V compounds. The inequivalent sites differ in their environment of lattice neighbours. The polytypes differ by the stacking sequence of Si and C double layers. As one of the consequences, the crystal fields experienced by a donor will be different depending on the site within the polytype. In 3C there is only one site having cubic symmetry, while in 4H-SiC there are two inequivalent sites, one having quasi-cubic symmetry (k) and a second with hexagonal symmetry (h). In 6H-SiC there are three inequivalent sites, one with hexagonal (h) and two with quasi-cubic (k 1 , k 2 )

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Shallow Donor Electrons in Silicon. I. Hyperfine Interactions from ENDOR Measurements

Cited by 103 publications

References 9 publications

Coherent Control of a SingleSi29Nuclear Spin Qubit

Coherent Control of a SingleSi29Nuclear Spin Qubit

Characterization of Defect Centres in Semiconductors by Advanced ENDOR Techniques

The Microscopic and Electronic Structure of Shallow Donors in SiC

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