Characterization of Defect Centres in Semiconductors by Advanced ENDOR Techniques

Gregorkiewicz, T.; Altink, H. E.; Ammerlaan, C.A.J.

doi:10.12693/aphyspola.80.161

Cited by 3 publications

(1 citation statement)

References 7 publications

(7 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The V resides in a Ga substitutional or in a high symmetry interstitial site tetrahedrally surrounded by four nearest As neighbors. The use of advanced ENDOR techniques such as pulsed-and CW-ENDOR optically detected ENDOR and field-stepped ENDOR techniques in the study of boron-vacancy and thermal donors in silicon and the gallium vacancy in gallium phosphide has been reviewed [229]. The use of advanced ENDOR techniques such as pulsed-and CW-ENDOR optically detected ENDOR and field-stepped ENDOR techniques in the study of boron-vacancy and thermal donors in silicon and the gallium vacancy in gallium phosphide has been reviewed [229].…”

Section: Impurity Centers In Semiconductor Host Crystalsmentioning

confidence: 99%

Endor Spectroscopy

Kispert

Piekara-Sady

Handbook of Applied Solid State Spectroscopy

View full text Add to dashboard Cite

To understand what electron nuclear double resonance (ENDOR) transitions are, let us consider the energy levels of a system containing one unpaired electron (S = ½) and one nuclear spin (I = ½), as in a hydrogen atom. Since the electron spin and nuclear spin can each be oriented with or against the external magnetic field, there are four possible energy levels as shown in Figure 4.1. The two electron spin eigenfunctions are denoted by e and e , whereas the two nuclear spin wavefunctions are denoted n and n . In the presence of a large external applied field, the selection rule in electron paramagnetic resonance (EPR) is that the electron flips (changes directions) but the nuclear spin does not flip in an EPR transition. Thus, in Figure 4.1, an EPR transition will occur between energy levels 1 and 4 and a second EPR transitions will occur between energy levels 2 and 3. The intensity of the transition between energy levels 1 and 4 will depend on the population differences of these two energy levels. If one then applies a nuclear frequency to the system, which corresponds to either the energy difference between levels 4 and 3 or the difference between lines 2 and 1, one will induce nuclear spin flip that will change the populations in energy levels 4 and 1, respectively. This changes the intensity of the observed EPR signal. This change in intensity is referred to as the ENDOR response. Figure 4.1 Energy diagram for S = 1/2 and I = 1/2.

show abstract

Section: Impurity Centers In Semiconductor Host Crystalsmentioning

confidence: 99%

Endor Spectroscopy

Kispert

Piekara-Sady

Handbook of Applied Solid State Spectroscopy

View full text Add to dashboard Cite

show abstract

Aluminum incorporation in the Si-NL10 thermal donor

1992

View full text Add to dashboard Cite

Trapping of Molecular Hydrogen in Porous Silicon and at Si/SiO₂ Interfaces and a Possible Reinterpretation of the P_b Center

1993

View full text Add to dashboard Cite

Many recent studies of the highlighted problem of visible-range photoluminescence of porous silicon (po-Si) indicate the presence of hydrogen in this material. However, its actual role is not clear with the discussed possibilities ranging from passivation of the surface defects to some form of active participation in the photoluminescence (PL) mechanism itself. At the same time, in several magnetic resonance studies of po-Si the so-called Pb center, originally identified with the <111>-directed silicon broken bond stabilized at Si/SiO2 interfaces, has been reported.Very recently the paramagnetic state of molecular hydrogen in bulk silicon has been identified. The spin-Hamiltonian parameters of the related Si-NL52 EPR spectrum appear to be identical to those of the Pb center. This observation casts severe doubts on the original interpretation of the Pb center while, on the other hand, offering new evidence of a prominent presence of hydrogen molecules both in po-Si and at the Si/SiO2 interface. In this paper the similarities of Si-NL52 and Pb centers are examined in detail, and it is argued that the centers are the same. It is concluded that many features of the Pb center which could not be explained within the broken-bond model can be understood with the interstitial hydrogen molecule model.

show abstract

Characterization of Defect Centres in Semiconductors by Advanced ENDOR Techniques

Cited by 3 publications

References 7 publications

Endor Spectroscopy

Endor Spectroscopy

Aluminum incorporation in the Si-NL10 thermal donor

Trapping of Molecular Hydrogen in Porous Silicon and at Si/SiO₂ Interfaces and a Possible Reinterpretation of the P_b Center

Contact Info

Product

Resources

About

Characterization of Defect Centres in Semiconductors by Advanced ENDOR Techniques

Cited by 3 publications

References 7 publications

Endor Spectroscopy

Endor Spectroscopy

Aluminum incorporation in the Si-NL10 thermal donor

Trapping of Molecular Hydrogen in Porous Silicon and at Si/SiO2 Interfaces and a Possible Reinterpretation of the Pb Center

Contact Info

Product

Resources

About

Trapping of Molecular Hydrogen in Porous Silicon and at Si/SiO₂ Interfaces and a Possible Reinterpretation of the P_b Center