Shallow defects responsible for GR noise in MOSFETs

Noise in carbon nanotube field effect transistor

“…2͑a͒. The results show that the S V g of 640 Hz overlaps to the S V g of 40 Hz for all V g , confirming that the PSD is 1 / f noise in the absence of visible single defect centers ͑RTS͒ 1 or shallow recombination defect centers 8 for the gate region we are interested in. The inputreferred noise in the CNT-FET is orders of magnitude larger than that in a standard metal oxide semiconductor field effect transistor ͑MOSFET͒ with the same device size.…”

Identification of Si film traps in p-channel SOI FinFETs using low temperature noise spectroscopy

“…Since the energy level of the trap is discrete and unique, the Fermi level scans the same traps (but for increasing depth in the depletion zone). The characteristic time constant of the Lorentzian associated with this trap does not change with gate bias variation [6]. Similar trends were observed for all the investigated devices: the RTS contributions and the G-R noise which can be related with traps located at the gate dielectric/Si interface appear in particular in strong inversion.…”

“…Thereafter, we briefly present the noise model of G-R due to traps located in the depletion region of the transistor, which, according to the theory developed in [6] leads to Lorentzians for which the characteristic frequency does not change with the applied gate voltage. In this case, the total spectral density of the carrier number fluctuations is obtained by integration of Eq.…”

“…The low frequency noise (LFN) analysis has been proposed as a non-destructive diagnostic tool in order to evaluate the quality of the gate oxide interface and of the depleted silicon film [5][6][7][8][9]. The evolution of the low frequency noise with the applied gate voltage at different temperatures was already studied for pchannel standard and strained SOI FinFETs with the aim to investigate the quality of the gate oxide interface through the 1/f noise analysis [10].…”

On the Variability of the Low-Frequency Noise in UTBOX SOI nMOSFETs

“…4b, one can derive that the Lorentzian plateau and corner frequency of the Lorentzian occurring at the lowest frequencies (~25 Hz) is not markedly dependent on the gate voltage. This strongly suggests that the underlying defects are present in the silicon depletion region [23][24][25][26][27]. This opens the door for GR noise spectroscopy as a function of temperature.…”