On the Variability of the Low-Frequency Noise in UTBOX SOI nMOSFETs

Abstract

The variability of the low-frequency (LF) noise in n-channel MOSFETs fabricated on an Ultra Thin Buried Oxide (UTBOX) Silicon-on-Insulator (SOI) substrate has been studied and compared with the variability in the threshold voltage and low-field mobility of the same devices. No correlation has been found between the noise magnitude and the DC parameters, suggesting that the traps responsible for the current fluctuations do not affect the latter. A possible explanation is that the LF noise is dominated by Generation-Recombination (GR) centers in the silicon film, which have less impact on the drain current.

Low-frequency noise in downscaled silicon transistors: Trends, theory and practice

“…Third, the lowfrequency noise in MOS transistors is higher than the noise in BJTs, as one can see in Figure 15. In this figure, the data are for 134 nMOS transistors from [22,47,48,49,50,51,72,86,87,88,89,90,91,92,93,94,95,96,97,98,99,100,101,102,103,104,105,106,107,108,109,110,111,112,113,114,115,116,117,118,119,120,121,122,123], and for 53 pMOS transistors from [47,52,86,…”

“…These issues were discussed earlier by the help of eqs. (110) to (115) and ( 147) to (154), respectively.…”

“…Input-referred voltage noise S V G (gate voltage 1/f noise at 1Hz) in silicon MOS transistors compared to the corresponding S V B in silicon npn BJTs. ( ) for nMOS transistors from[22,47,48,49,50,51,72,82,86,87,88,89,90,91,92,93,94,95,96,97,98,99,100,101,102,103,104,105,106,107,108,109,110,111,112,113,114,115,116,117,118,119,120,121,122,123], ( ) for pMOS transistors from[47,52,…”

Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs: Challenges and Opportunities

“…9, representing the input-referred voltage noise PSD at threshold voltage and f = 25 Hz versus the low-field electron mobility (μ n ) in linear operation. 40 However, when dividing the noise data into Group I and II (Fig. 6), corresponding with nMOSFETs with predominantly (low) 1/f noise or (high) GR noise below 1 kHz a clear trend becomes ) unless CC License in place (see abstract).…”

Empirical and Theoretical Modeling of Low-Frequency Noise Behavior of Ultrathin Silicon-on-Insulator MOSFETs Aiming at Low-Voltage and Low-Energy Regime

“…Basically, we concentrate the discussion on the current fluctuation of devices in the subthreshold bias range, and this paper assumes that the LFN behaviors of devices can be characterized by the carrier density fluctuation. This paper also examines on aspects of the drain current fluctuations of short-channel inversion-channel and buried-channel SOI MOSFETs with ultrathin p-Si bodies [37,38,39,40] because it is anticipated that differences in the conduction property will change the noise behavior. First, aspects of the drain current noise behavior are analyzed experimentally in order to categorize the dominant noise sources like interface traps.…”