SEU Prediction From SET Modeling Using Multi-Node Collection in Bulk Transistors and SRAMs Down to the 65 nm Technology Node

Evidence of the Robustness of a COTS Soft-Error Free SRAM to Neutron Radiation

“…It is based on the modeling of the successive mechanisms that occur between the entrance of a particle into matter and the SEE occurrence, including the environment descriptions [26], the radiation interaction [4], the transport/collection mechanisms at physical level [27] and the electrical mechanisms [28]. Alpha-emitting impurities can be found in some packaging materials, chemicals and materials used in the fabrication process of the chip.…”

Impact of scaling on the soft error sensitivity of bulk, FDSOI and FinFET technologies due to atmospheric radiation

“…Investigations were performed and validated in several scientific fields, such as operational calculations [23,24], nano-scale technologies (bulk, FDSOI [10] and FinFET [25]) and the design impact on SEE responses [26], transport/ collection models [27] and emerging problematic issues (direct ionizing protons [9] and muons). Significant works have additionally investigated the contribution of the radial ionization profile of SEE modeling [10][11][12].…”

“…Based on the ability of MUSCA SEP3 to model SEs in nanometric devices [25,27,28], this paper investigates the terrestrial radiation impacts on the SEU sensitivity along the scaling trend of FDSOI and bulk CMOS nano-scale technologies. Radiation fields considered in this work include neutrons, protons, muons and alphaemitters.…”

Analyzing the Influence of the Angles of Incidence and Rotation on MBU Events Induced by Low LET Heavy Ions in a 28-nm SRAM-Based FPGA

“…Recent work [1] compared experimental data with simulations performed at transistor level by the prediction tool MUSCA SEP3 [3][4][5]. As published by Xilinx the SRAMbased FPGA (Artix-7) has been designed with HPL.…”