Analyzing the Influence of the Angles of Incidence and Rotation on MBU Events Induced by Low LET Heavy Ions in a 28-nm SRAM-Based FPGA

Tonfat, Jorge; Kastensmidt, Fernanda Lima; Artola, L.; Hubert, G.; Medina, N. H.; Added, N.; Aguiar, Vitor A. P.; Aguirre, Fernando; Macchione, Eduardo Luiz Augusto; Silveira, M. A. G.

doi:10.1109/tns.2017.2727479

Cited by 23 publications

(8 citation statements)

References 13 publications

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“…In the T M 5 test of Table I, 681 cells were flipped, from which a DV set with 231,540 elements was built 1 . According to (2), in the Appendix, most of possible values should appear once or zero (11) times, but the expected number of elements repeated twice is 1383.2, three times 6.28, four times 0.023 and, finally, 5 times 6.9·10 −5 so the occurrence of DV -elements 5 times or more is unlikely. However, it was found in actual results that 3233 appears 86 times, 1 does 45 times, etc.…”

Section: Extraction Of Multiple Events: Mcusmentioning

confidence: 99%

Single Event Upsets Under 14-MeV Neutrons in a 28-nm SRAM-Based FPGA in Static Mode

Fabero

Mecha

Franco

et al. 2020

IEEE Trans. Nucl. Sci.

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A sensitivity characterization of a Xilinx Artix-7 FPGA against 14.2 MeV neutrons is presented. The content of the internal SRAMs and flip-flops were downloaded in a PC and compared with a golden version of it. Flipped cells were identified and classified as cells of the configuration RAM, BRAM, or flip-flops. SBUs and MCUs with multiplicities ranging from 2 to 8 were identified using a statistical method. Possible shapes of multiple events are also investigated, showing a trend to follow wordlines. Finally, MUSCA SEP3 was used to make assesment for actual environments and an improvement of SEU injection test is proposed.

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Section: Extraction Of Multiple Events: Mcusmentioning

confidence: 99%

Single Event Upsets Under 14-MeV Neutrons in a 28-nm SRAM-Based FPGA in Static Mode

Fabero

Mecha

Franco

et al. 2020

IEEE Trans. Nucl. Sci.

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“…However, this can be sometimes unfeasible due to the requirement of long and expensive radiation experiments. In other cases [4], [10], results from experiments were treated using statistical approaches [11]- [13] to determine the probability of false multiple events depending on the memory size and number of bitflips. Among these methods, the most accepted one is that called "the birthday statistics" [12].…”

Section: Introductionmentioning

confidence: 99%

Influence of Randomness During the Interpretation of Results From Single-Event Experiments on SRAMs

Franco

Clemente

Mecha

et al. 2019

IEEE Trans. Device Mater. Relib.

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After having carried out radiation experiments on memories, the detected bitflips must be classified into single bit upsets and multiple events to calculate the cross sections of different phenomena. There are some accepted procedures to determine if two bitflips are related. However, if there are enough bitflips, it is possible that unrelated pairs of errors appear in nearby cells and they are erroneously taken as a multiple event. In this paper, radiation experiments are studied as a special case of the urn-and-balls problem in probability theory to estimate how the measured multiple-event cross sections must be corrected to remove the overestimation due to the false events.

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“…It is important to reevaluate most single-event (SE) effects for FinFET technologies, as there are significant differences between planar technologies and FinFET technologies. H. Zhang et al [129] applied Synopsys' TCAD tool suite to simulate the effects of heavy ion impact angles on the SEE of a 16 nm FinFET 3D TCAD model D-latch. The probability of failure and the SEU cross-section increase with the increase of the tilt angle, but decrease with the increase of the angle when heavy LET heavy ions are incident.…”

Section: Influence Of High-energy Particles On Semiconductor Devicesmentioning

confidence: 99%

TSV Technology and High-Energy Heavy Ions Radiation Impact Review

Tian

Liu

2018

Electronics

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Three-dimensional integrated circuits (3D IC) based on TSV (Through Silicon Via) technology is the latest packaging technology with the smallest size and quality. As a result, it can effectively reduce parasitic effects, improve work efficiency, reduce the power consumption of the chip, and so on. TSV-based silicon interposers have been applied in the ground environment. In order to meet the miniaturization, high performance and low-cost requirements of aerospace equipment, the adapter substrate is a better choice. However, the transfer substrate, as an important part of 3D integrated circuits, may accumulate charge due to heavy ion irradiation and further reduce the performance of the entire chip package in harsh space radiation environment or cause it to fail completely. Little research has been carried out until now. This article summarizes the research methods and conclusions of the research on silicon interposers and TSV technology in recent years, as well as the influence of high-energy heavy ions on semiconductor devices. Based on this, a series of research methods to study the effect of high-energy heavy ions on TSV and silicon adapter plates is proposed.Electronics 2018, 7, 112 2 of 29 wafer was invented by M.G Smith et al. [2], which opposite surfaces were connected ohmically to the degenerately doped portions to be electrically connected along the thru-connection. With further research and exploration, 2.5D/3D integration technology with TSV realized integrated circuits with advantages of high interconnection density, high performance, low power consumption, and low cost [3,4]. In addition, the core is widely considered to be the leading technology in the field of high density packaging in the future and is an effective way to break through Moore's Law [5][6][7]. Figure 1. Silicon interposer through electrical copper coating technology production: (a) The construction of through-silicon via on the wafer; (b) The dry film etchant is stuck on the wafer, then exposed and etched; (c) Hole plating and pad fabrication by electroplating methods; (d) The photoresist removing. Adapted with permission from [27], Copyright Elsevier, 2016.

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Analyzing the Influence of the Angles of Incidence and Rotation on MBU Events Induced by Low LET Heavy Ions in a 28-nm SRAM-Based FPGA

Cited by 23 publications

References 13 publications

Single Event Upsets Under 14-MeV Neutrons in a 28-nm SRAM-Based FPGA in Static Mode

Single Event Upsets Under 14-MeV Neutrons in a 28-nm SRAM-Based FPGA in Static Mode

Influence of Randomness During the Interpretation of Results From Single-Event Experiments on SRAMs

TSV Technology and High-Energy Heavy Ions Radiation Impact Review

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