Serial and Parallel Si, Ge, and SiGe Direct-Write with Scanning Probes and Conducting Stamps

Vasko, Stephanie E.; Kapetanovic, Adnan; Talla, Vamsi; Brasino, Michael; Zhu, Zihua; Schöll, A.; Torrey, Jessica D.; Rolandi, Marco

doi:10.1021/nl200742x

Cited by 18 publications

(18 citation statements)

References 34 publications

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“…It has also been applied to integrate dissimilar materials with nanoscale accuracy such as Ge patterns on a silicon surfaces 62 . The potential of b-SPL goes beyond the field of nanolithography.…”

Section: Bias-induced Splmentioning

confidence: 99%

“…The discovery of probe-based oxidation 41 was shadowed by the more exciting experiments reporting either modifications 62 or manipulations 63 of surfaces with atomicscale capabilities 64 . However, the generality and robustness of the underlying chemical process (anodic oxidation) has transformed Dagata's observation into a reliable a versatile nanolithography approach for patterning and device fabrication 42 .…”

Section: Oxidation Splmentioning

confidence: 99%

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Advanced scanning probe lithography

2014

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The nanoscale control afforded by scanning probe microscopes has prompted the development of a wide variety of scanning probe-based patterning methods. Some of these methods have demonstrated a high degree of robustness and patterning capabilities that are unmatched by other lithographic techniques. However, the limited throughput of scanning probe lithography has prevented their exploitation in technological applications. Here, we review the fundamentals of scanning probe lithography and its use in materials science and nanotechnology. We focus on the methods and processes that offer genuinely lithography capabilities such as those based on thermal effects, chemical reactions and voltage-induced processes. Published in:Nature Nanotechnology 9, 577-587 (2014) Progress in nanotechnology depends on the capability to fabricate, position, and interconnect nanometre-scale structures. A variety of materials and systems such as nanoparticles, nanowires, two-dimensional materials like graphene and transition metal dichalcogenides, plasmonics materials, conjugated polymers and organic semiconductors are finding applications in nanoelectronics, nanophotonics, organic electronics and biomedical applications. The success of many of the above applications relies on the existence of suitable nanolithography approaches. However, patterning materials with nanoscale features aimed at improving integration and device performance poses several challenges. The limitations of conventional lithography techniques related to resolution, operational costs and lack of flexibility to pattern organic and novel materials have motivated the development of unconventional fabrication methods [1][2][3] .Since the first patterning experiments performed with a scanning probe microscope in the late 80s, scanning probe lithography (SPL) has emerged as an alternative lithography for academic research that combines nanoscale feature-size, relatively low technological requirements and the ability to handle soft matter from small organic molecules to proteins and polymers. Scanning probe lithography experiments have provided striking examples of its capabilities such as the ability to pattern 3D structures with nanoscale features 4 , the fabrication of the smallest field-effect transistor 5 or the patterning of proteins with 10 nm feature size 6 . Figure 1a shows a general scheme of SPL operation. There is a variety of approaches to modify a material in a probe-surface interface which have generated several SPL methods. Scanning probe lithographies can be either classified by emphasizing the distinction between the general nature of the process, chemical versus physical, or by considering if SPL implies the removal or addition of material. However, we consider it is more inclusive and systematic to classify the different SPL methods in terms of the driving mechanisms used in the patterning process, namely thermal, electrical, mechanical and diffusive methods (Fig. 1b). Challenges in nanoscale lithographyThe workhorse of large volume CMOS fabrication, o...

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Section: Bias-induced Splmentioning

confidence: 99%

Section: Oxidation Splmentioning

confidence: 99%

Advanced scanning probe lithography

2014

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“…Besides the local oxidation of silicon, the dissociation of organic molecules under an intense electric field (approximately 10 9 V m −1 ) localized below a biased AFM tip has been recently used to create nanometer-sized heterojunctions employing common organics [6,7] organometallics [8], or fluorinated solvents [9], obtaining remarkable results in terms of resolution (reaching 2-nm feature size), scalability (employing stamp technology) [5,6], and writing speed [7]. However, the technique is relatively new, and little effort has been made in extensively exploiting its wide fabrication capabilities.…”

Section: Introductionmentioning

confidence: 99%

Oxidative and carbonaceous patterning of Si surface in an organic media by scanning probe lithography

2013

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A simple top-down fabrication technique that involves scanning probe lithography on Si is presented. The writing procedure consists of a chemically selective patterning in mesitylene. Operating in an organic media is possible to perform local oxidation or solvent decomposition during the same pass by tuning the applied bias. The layer deposited with a positively biased tip with sub-100-nm lateral resolution consists of nanocrystalline graphite, as verified by Raman spectroscopy. The oxide pattern obtained in opposite polarization is later used as a mask for dry etching, showing a remarkable selectivity in SF6 plasma, to produce Si nanofeatured molds.

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“…In particular, top-down lithographies have demonstrated their ability to produce silicon nanowire-based field effect transistors (FETs) with very small sizes and good electrical properties. The high spatial resolution and positioning capabilities of scanning probe lithography [14][15][16][17] (SPL) have been exploited to fabricate straight or curved SiNW FETs 18 and their electrical properties have been characterized 19 The optimization of the SiNW devices requires to decrease the size of the devices both in width and height. The fabrication of SiNW FETs by oxidation scanning probe lithography (o-SPL) relies on the transfer of an oxide pattern (mask) into the active layer of a silicon on insulator (SOI) substrate by etching techniques.…”

mentioning

confidence: 99%

Fabrication of sub-12 nm thick silicon nanowires by processing scanning probe lithography masks

Ryu

Postigo²,

García³

et al. 2014

Applied Physics Letters

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Silicon nanowires are key elements to fabricate very sensitive mechanical and electronic devices. We provide a method to fabricate sub-12 nm silicon nanowires in thickness by combining oxidation scanning probe lithography and anisotropic dry etching. Extremely thin oxide masks (0.3-1.1 nm) are transferred into nanowires of 2 to 12 nm in thickness. The width ratio between the mask and the silicon nanowire is close to one which implies that the nanowire width is controlled by the feature size of the nanolithography. This method enables the fabrication of very small silicon nanowires with cross-sections below 100 nm 2. Those values are the smallest obtained with a top-down lithography method.

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Serial and Parallel Si, Ge, and SiGe Direct-Write with Scanning Probes and Conducting Stamps

Cited by 18 publications

References 34 publications

Advanced scanning probe lithography

Advanced scanning probe lithography

Oxidative and carbonaceous patterning of Si surface in an organic media by scanning probe lithography

Fabrication of sub-12 nm thick silicon nanowires by processing scanning probe lithography masks

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