Separate measurements of dynamical and kinematical X-ray diffractions from silicon crystals with a triple crystal diffractometer

Abstract

A, 1 1~s~) arid K. KOHRA The kinematical and dynaniical component's of diffracted X-rays from perfect and mechanically dsinsged silicon single crystals are separately measured in t.he vicinity of the reciprocal lattice point using a triple crystal arrangement of ( j -n , --n, +n) setting. I n the case of a perfect' crystal, besides the normal dynamical diffraction, a broad and weak hump due to the lattice vibration is observed a t the scattering vector deviation as small as 2 x lo3 cni-l. For crystals with lapped and scratched surface a noticeable change of the int>ensity curves, i.e. a change! of the equal-intensity coiit,our in the reciprocal space, is observed.Die kinematischen und dynamischen Komponenten der gestreuten R,ontgenstrahlen von perfekten und niechanisch gestorten Siliziumeinkrist'ailen werden in der h'ahe von reziproken Gitterpunkten mit einem Dreikristalldiffraktometer in (+n, -I $ , + n ) Anordnang gemessen. I m Fall des perfekten Kristalls wird aul3er der normalen dynaniischen Beugting, ein breit.er und schm6chere.r Bnckel der Kurve infolge der Gitterschwingung bei Abweichungen des Streuvektors von ctwa 2 x lo3 cm-1 beobacht'et. Fur Kristalle mit polierten und geritzten Oberflachen wird eine nierkliche Anderung der Intensitatskurve, namlich eine anderung der Konturen gleicher Intensitgt im reziproken Gitterraum, beobachtet.

X-ray Multiple Diffraction Phenomenon in the Evaluation of Semiconductor Crystalline Perfection

“…In general, for crystals with moderate absorption the one-dimensional character of the rocking curve is able neither to distinguish between primary and secondary extinction effects (Zachariasen, 1965) nor to give information on the distribution of misorientations in directions, other than the normal to diffracting planes. Using triple-crystal diffractometry, Iida & Kohra (1979) and Wang & Matyi (1992) have shown that the diffracted intensity can be separated into its dynamical (coherent) and kinematical (incoherent) components. It is possible due to an extra angular dimension added to the diffraction process by the rotation angle of a highly perfect analyzer crystal.…”

Shear strains in dry etched GaAs/AlAs wires studied by high resolution x-ray reciprocal space mapping

“…The independent variation of the two diffraction angles ͑between incident x-rays and sample surface͒ and 2 ͑be-tween incident and scattered x-rays͒ provides the possibility of reciprocal space mapping, i.e., the acquisition of twodimensional projections in the three-dimensional reciprocal space. 6,7 The lateral macroperiodicity of the wire and dot arrays gives rise to lateral intensity maxima ͑wire satellites W i and dot satellites D i ) in the diffraction pattern. In principle, the full information about the geometrical shape ͑height, width, inclination of the sidewalls, period͒ as well as about the structural quality ͑strain and crystalline damage͒ can be obtained from a two-dimensional map of reciprocal space.…”

Optimization of ion implantation damage annealing by means of high-resolution X-ray diffraction

“…The other streak at an angle of about 10 ° with the ~0/20 axis is due to the increased lattice parameter after the ion-implantation. Using the formulae given by Iida and Kohra [33], this can be transformed in reciprocal space into an angle with the qx axis of 18 °, where the qx axis is parallel to the ¢o/20 axis [34]. This is equal to the angle that the (026) vector makes with the (001) vector perpendicular to the wafer surface.…”