X-ray Multiple Diffraction Phenomenon in the Evaluation of Semiconductor Crystalline Perfection

Abstract

In this work, a method that takes advantage of the threedimensional nature of the X-ray multiple-diffraction (MD) phenomenon for evaluating the crystalline perfection of semiconductors is proposed. The energy-transfer process among the MD beams can occur in a kinematical (secondary extinction) or a dynamical (primary extinction) regime. The effects that each regime can have on MD Bragg condition are theoretically investigated. The method provides information on size and misorientation of perfect-crystal regions as well as on the probability of interaction between them. The perfection of GaAs and Ge (001) surfaces after mechanical and/or chemical polishing has been investigated with this method and, as an extension of its applicability, porous silicon and GaAs (001) with Se ions implanted were also investigated.

Strength tuning of multiple waves in crystals

“…In this experiment, the Renninger scan of the 333 Ge re¯ec-tion with %-polarized Cu K radiation was analyzed. Since then, multiple diffraction methods have found several applications in material analysis, such as the determination of piezoelectric coef®cients of organic crystals , structural phase transitions in single-crystals , crystalline perfection of crystal surfaces (Morelha Ä o & Cardoso, 1996;Hayashi et al, 1997, Morelha Ä o et al, 1999 and precise lattice parameters of semiconductor heterostructures (Morelha Ä o & Cardoso, 1993). All these applications, plus old applications such as the precise determination of lattice parameters of bulk crystals (Isherwood & Wallace, 1966;Post, 1975), are limited to the use of weak Bragg re¯ections as the primary one.…”

“…Since it was observed by Renninger (1937), a considerable amount of work has been performed by several authors in order to understand the phenomenon and use it as a tool for material analysis (for example, Lipscomb, 1949;Hart & Lang, 1961;Moon & Shull, 1964;Colella, 1974;Caticha-Ellis, 1975;Post, 1977;Chang, 1982Chang, , 1984Chang, , 1998Kshevetskii et al, 1985;Thorkildsen, 1987;Shen & Collela, 1988;Morelha Ä o & Cardoso, 1996;Weckert & Hu È mmer, 1997;Avanci et al, 1998;Avanci & Morelha Ä o, 2000). In this work, we explore the linear polarization of synchrotron radiation as a tuning key for the strength of simultaneously diffracted waves.…”

Investigation of Bragg surface diffraction in semiconductors and epitaxic structures by reciprocal-space analysis

“…The extinction regime in which such transfer takes place depends on the crystalline perfection of the surface. Based on this fact, the mapping of the BSD pro®le, in an 3:9 scan technique, has been proposed [Morelha Ä o & Cardoso (1996). J. Appl.…”

Growth and capping of InAs/GaAs quantum dots investigated by x-ray Bragg-surface diffraction

“…1͒. Due to the very grazing angle of the surface beam, any defect at the crystal surface may also increase the rescattering condition, a fact that has been used to investigate surface-finishing and ionimplantation effects on semiconductors 17,18 and, more recently, to directly probe interface strain with atomic resolution in depth on epitaxial films. 19 These unique properties of the BSD make it also very suitable, in principle, to investigate nanostructures on top of semiconductor single crystals.…”