Sensitivity to electrostatic discharges of “low-cost” 1.3 μm laser diodes: a comparative study

Wallon, Jacques; Terol, G.; Bauduin, B.; Devoldére, P.

doi:10.1016/0921-5107(94)90073-6

Cited by 19 publications

(12 citation statements)

References 5 publications

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“…No hard degradation occurred for the 750μm lasers. As discussed in the previous paper [6], the dependence of cavity length might be attributed to the difference in energy flux. For the shorter laser cavity, the energy flux injected into the laser cavity was greater.…”

Section: (A) Esd Degradation Characteristicsmentioning

confidence: 74%

“…Optoelectronic manufacturers and research laboratories have been striving to meet the 500V ESD requirement [3][4][5][6]. Some companies have shown that the laser devices exhibit ESD threshold above 2000V in reverse polarity [7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

“…Some companies have shown that the laser devices exhibit ESD threshold above 2000V in reverse polarity [7][8][9][10][11]. Despite of the technological achievements in ESD performance, there was only limited work done previously on the basic understanding of ESD characteristics and physical mechanisms [3][4][5][6][7]. Although the ESD thresholds of FP and DFB lasers were reported, the interplay of ESD and electrical overstress (EOS), the size effect and the ESD degradation behavior, have not been well understood [8][9].…”

Section: Introductionmentioning

confidence: 99%

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Size Effect on ESD Threshold and Degradation Behavior of InP Buried Heterostructure Semiconductor Lasers

Huang¹,

Lu²

2009

TOAPJ

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Optoelectronic components such as laser diodes and light-emitting diodes are vulnerable to electrostatic discharge (ESD) and electrical overstress (EOS). In this paper, we extensively study the size effect on ESD performance of buried heterostructure (BH) distributed feedback (DFB) InGaAsP/InP lasers. We show that the ESD threshold and degradation behavior of BH lasers are correlated with the cavity length and contact width. The ESD threshold increases linearly with increasing cavity length and contact width. For the ESD degradation behavior, the occurrence frequency of hard degradation, a behavior characterized with a sudden jump in threshold current during the ESD voltage ramp, decreases with increasing cavity length. We also show that the dielectric layer is influential in ESD performance. The physical mechanisms of the ESD behavior will also be discussed.

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Section: (A) Esd Degradation Characteristicsmentioning

confidence: 74%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Size Effect on ESD Threshold and Degradation Behavior of InP Buried Heterostructure Semiconductor Lasers

Huang¹,

Lu²

2009

TOAPJ

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“…High reliability is required from such LDs, and the authors have studied a significant reliability index, namely, the tolerance to electrostatic discharge (ESD). ESD-induced degradation has been investigated by other research institutions, and it has been shown that LD facets are destroyed by a forward-biased ESD test [1][2][3]. In addition, our analysis has demonstrated that the damage is related to melting caused by light absorption at an active layer of the facet, just as in the case of COD (Catastrophic Optical Damage) [4].…”

Section: Introductionmentioning

confidence: 83%

Analysis of GaInAsP laser diodes degraded by light absorption at an active layer of the facet

Ichikawa

Ito

Fukuda

et al. 2010

Elect Comm in Japan

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SUMMARYElectrostatic discharge-induced degradation is one of the serious reliability problems of GaInAsP/InP laser diodes. The authors have conducted an analysis of electrostatic discharge-induced degradation, and have elucidated the principal degradation mechanism. The main cause of degradation is heating by light absorption at the active layer of the facet. This phenomenon is similar to the catastrophic optical damage that occurs in GaAs-based high-power laser diodes. The problem has become more serious with the recent tendency to high power demand. Therefore, technology to suppress against degradation is extremely important. Focusing on facet coating, which is one of the key processes to suppress facet degradation, we demonstrated that facet degradation can be successfully suppressed by inserting an ultrathin aluminum layer between the semiconductor and the dielectric coaling films. This effect is caused by a reduction of surface recombination. This degradation suppression technology has the potential to be applied not only to GaInAsP/InP laser diodes, but to any InP-based laser diodes.

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“…The mechanism of forward-biased electrostatic discharge (ESD)-induced degradation is also related to optical damage. [9][10][11][12][13][14] Since a high current pulse was applied to an LD, high light output power is instantaneously generated. Then, the degradation mechanism resembles that of COD.…”

Section: Introductionmentioning

confidence: 99%

Failure Analysis of InP-Based Edge-Emitting Buried Heterostructure Laser Diodes Degraded by Forward-Biased Electrostatic Discharge Tests

Ichikawa

Matsukawa

Hamada

et al. 2009

jjap

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We investigated the forward-biased electrostatic discharge (ESD)-induced degradation that is one of the important reliability issues for InPbased edge-emitting buried heterostructure laser diodes. Although it has been suggested that the degradation mechanism is related to optical damage, the detailed mechanism has not been established. Thus, we carried out failure analysis. Two elliptically shaped degraded regions, which were introduced by the first and second ESD pulses, were observed in an active layer. A peculiar chain-like degradation was created along the longitudinal axis. This degradation was caused by light absorption at an active layer. We also investigated the relationship between forward-biased ESD tolerance and an aging test. We observed a decrease in tolerance as a result of the aging test for laser diodes with cleaved facets. This decrease was sufficiently suppressed by facet coating. We identified two reasons why facet coating is important. One is to obtain sufficient ESD tolerance under initial conditions, and the other is to suppress the decrease in ESD tolerance during aging.

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Sensitivity to electrostatic discharges of “low-cost” 1.3 μm laser diodes: a comparative study

Cited by 19 publications

References 5 publications

Size Effect on ESD Threshold and Degradation Behavior of InP Buried Heterostructure Semiconductor Lasers

Size Effect on ESD Threshold and Degradation Behavior of InP Buried Heterostructure Semiconductor Lasers

Analysis of GaInAsP laser diodes degraded by light absorption at an active layer of the facet

Failure Analysis of InP-Based Edge-Emitting Buried Heterostructure Laser Diodes Degraded by Forward-Biased Electrostatic Discharge Tests

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