Analysis of GaInAsP laser diodes degraded by light absorption at an active layer of the facet

Abstract

SUMMARYElectrostatic discharge-induced degradation is one of the serious reliability problems of GaInAsP/InP laser diodes. The authors have conducted an analysis of electrostatic discharge-induced degradation, and have elucidated the principal degradation mechanism. The main cause of degradation is heating by light absorption at the active layer of the facet. This phenomenon is similar to the catastrophic optical damage that occurs in GaAs-based high-power laser diodes. The problem has become more serious with the recent tendency to high power demand. Therefore, technology to suppress against degradation is extremely important. Focusing on facet coating, which is one of the key processes to suppress facet degradation, we demonstrated that facet degradation can be successfully suppressed by inserting an ultrathin aluminum layer between the semiconductor and the dielectric coaling films. This effect is caused by a reduction of surface recombination. This degradation suppression technology has the potential to be applied not only to GaInAsP/InP laser diodes, but to any InP-based laser diodes.