Sensitivity of Si-based zero-bias backward diodes for microwave detection

Abstract

Silicon-based backward diodes incorporating d-doped active regions for direct detection of microwave radiation with zero external DC bias have been demonstrated at room temperature and characterised for their sensitivity. The resulting backward diodes, which were grown by low temperature molecular beam epitaxy, show a high zero-bias curvature coefficient (g) of 23.2 V À1 with a junction resistance (R j) of 687 kO for a 5 mm diameter mesa diode. The microwave-frequency voltage sensitivity is reported for the first time; a measured sensitivity of 2376 V=W is obtained at zero-bias when driven from a 50 O source. An intrinsic 3 dB cutoff frequency of 1.8 GHz (5 mm diameter) was determined based on an extracted series resistance of 290 O and a junction capacitance of 0.307 pF using a small-signal model established to fit the measured S-parameters.

Gate-Tunable WSe2/SnSe2 Backward Diode with Ultrahigh-Reverse Rectification Ratio

“…We achieve an ultrahigh R ≈ 2.1 × 10 4 at V g = 0, which outnumbers the reverse rectification ratio of conventional Si, Ge backward diodes by two orders. 24,53 The characteristics of another device from a different run are shown in S1 of the Supporting Information, showing similar R value. The transport mechanism at forward and reverse bias is explained using the band diagrams in Figure 6c,d.…”

A Fully Tunable Single-Walled Carbon Nanotube Diode

“…These results suggest a remarkable potential for SWNT backward diode applications in high-speed switching, microwave mixing and detection, and small amplitude rectification. 24,25 Combined with its full tunability in both forward and reverse bias directions, the programmable SWNT diodes should open up new opportunities for integrated nanoelectronics and nanophotonics.…”

HAD fabricated on UTB AlGaN/GaN heterostructure for high‐sensitivity zero‐bias microwave detection

“…4 b , which is in good agreement with the simulation results. Compared to curvature coefficient γ of the device fabricated by F‐ion plasma treatment in our previous report [8], the UTB‐HAD with delicately designed AlGaN‐barrier thickness in this work delivers a significantly higher γ of 27.1 V −1 at zero bias at room temperature, which indicates a respectably high sensitivity can be obtained in the UTB‐HAD. The first‐order voltage sensitivity calculated by β V = 2 Z S γ is projected to be 2.7 mV/μW, where Z S = 50 Ω is the source impedance.…”

“…There have been several reports on AlGaN/GaN Schottky barrier diodes in the zero-bias circuits as a microwave detector [5,6]. In zero-bias circuits, the elimination of the DC biasing network led to simplified circuitry and reduced shot and flicker noise and DC power consumption [7,8]. This requires the diodes are capable of delivering a high-curvature coefficient and low-frequency noise at zero bias 8.…”