Gate-Tunable WSe<sub>2</sub>/SnSe<sub>2</sub> Backward Diode with Ultrahigh-Reverse Rectification Ratio

Krishna, M.; Dandu, Medha; Das, Sarthak; Majumdar, Kausik

doi:10.1021/acsami.7b18242

Cited by 67 publications

(56 citation statements)

References 58 publications

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“…The reverse rectification ratio of WSe2/PtS2 is over 10 8 . Compared to conventional semiconductors-based backward diodes, vdW tunneling diodes exhibit a higher rectification ratio and show great potential in high-speed and low-power devices 806,807 . On the other hand, Wu et al designed a unilateral depletion structure based on AsP and MoS2.…”

Section: Neuromorphic Computingmentioning

confidence: 99%

Recent Progress on Two-Dimensional Materials

Chang¹,

Chen²,

Chen³

et al. 2021

Acta Physico Chimica Sinica

289

103

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Research on two-dimensional (2D) materials has been explosively increasing in last seventeen years in varying subjects including condensed matter physics, electronic engineering, materials science, and chemistry since the mechanical exfoliation of graphene in 2004. Starting from graphene, 2D materials now have become a big family with numerous members and diverse categories. The unique structural features and physicochemical properties of 2D materials make them one class of the most appealing candidates for a wide range of potential applications.In particular, we have seen some major breakthroughs made in the field of 2D materials in last five years not only in developing novel synthetic methods and exploring new structures/properties but also in identifying innovative applications and pushing forward commercialisation. In this review, we provide a critical summary on the recent progress made in the field of 2D materials with a particular focus on last five years. After a brief background 物理化学学报 Acta Phys. -Chim. Sin. 2021, 37 (12), 2108017 (3 of 151) introduction, we first discuss the major synthetic methods for 2D materials, including the mechanical exfoliation, liquid exfoliation, vapor phase deposition, and wet-chemical synthesis as well as phase engineering of 2D materials belonging to the field of phase engineering of nanomaterials (PEN). We then introduce the superconducting/optical/magnetic properties and chirality of 2D materials along with newly emerging magic angle 2D superlattices. Following that, the promising applications of 2D materials in electronics, optoelectronics, catalysis, energy storage, solar cells, biomedicine, sensors, environments, etc. are described sequentially. Thereafter, we present the theoretic calculations and simulations of 2D materials. Finally, after concluding the current progress, we provide some personal discussions on the existing challenges and future outlooks in this rapidly developing field.

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Section: Neuromorphic Computingmentioning

confidence: 99%

Recent Progress on Two-Dimensional Materials

Chang¹,

Chen²,

Chen³

et al. 2021

Acta Physico Chimica Sinica

289

103

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show abstract

“…Recent studies have already demonstrated the exciting potentials of 2D materials and vdWHs in nano-electronics applications, such as atomically thin transistors, 22,23 vertical field-effect transistors, 24 and optoelectronics applications, such as photodetectors 25 and light-emitting diodes. 26,27 Although it has been relatively straightforward to produce ultrathin 2D nanosheets from intrinsically layered materials using various synthetic approaches, it is considerably more difficult to grow highly anisotropic ultrathin nanosheets from non-layered materials due to their intrinsic three-dimensional lattice structure. Nonetheless, a few examples of 2D nanosheets of some nonlayered materials (such as ZnSe, 28 PbS 29 ) and heterostructures (such as CdS/MoS 2 , 30 PbS/MoS 2 31 ) have been reported recently.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of ultrathin two-dimensional nanosheets and van der Waals heterostructures from non-layered γ-CuI

et al. 2018

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Two-dimensional (2D) nanosheets have attracted considerable recent interest for their atomically thin geometry and unique thickness-dependent electronic properties. The 2D nanosheets studied to date are generally limited to intrinsically layered materials, in which the covalently bonded atomic layers are held together by weak van der Waals forces and can be readily exfoliated to single or few-atom thick nanosheets. To prepare 2D nanosheets from non-layered materials can greatly expand the scope of 2D materials, but is much less straightforward. Here, we report the successful synthesis of ultrathin nanosheets from nonlayered γ-CuI on SiO 2 /Si substrate using a facile physical vapor deposition process. The resulting γ-CuI nanosheets display a triangular and hexagonal geometry with the lateral dimension up to 5 μm and thickness down to 1 nm. Raman spectroscopy, X-ray diffraction, and transmission electron microscopy studies demonstrate the resulting nanosheets retain single-crystalline γ-CuI phase. Additionally, we further show the γ-CuI nanosheets can be readily grown on other 2D materials (e.g., 2D-WSe 2 , 2D-WS 2) to form van der Waals heterostructures (vdWHs). Optical microscopy images and Raman intensity mappings confirm the formation of γ-CuI/WS 2 and γ-CuI/WSe 2 vertical heterostructures. The electrical transport studies show that γ-CuI nanosheets exhibit a low resistivity of~0.3 Ω cm and γ-CuI/WS 2 vertical heterostructures display a p-n diode behavior with distinct current rectification. The synthesis of γ-CuI nanosheets and heterostructures open a pathway to ultrathin nanosheets and van der Waals heterostructures from non-layered materials and could open up exciting opportunities in electronics and optoelectronics.

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“…In the range of ±1 V, the rectification ratio exceeds 10 2 , which is close to the rectification ratio of some 2D diodes with tunable gates. [28] After removing the gate voltage, the rectification ratio of the device does not disappear immediately (Figure 2c). As seen from the inset in Figure 2c, despite the absence of a gate voltage, the device still exhibits a high rectification ratio of ≈10 5 after 1 h. Compared with the applying gate voltage of 40 V, the rectification ratio of the device is improved by 10 3 orders of magnitude because when a forward gate voltage is applied, holes tunnel from the graphene layer into the WS 2 layer.…”

Section: Quasi-non-volatile Programmable Rectification Characteristicsmentioning

confidence: 98%

An Ultrafast Quasi‐Non‐Volatile Semi‐Floating Gate Memory with Low‐Power Optoelectronic Memory Application

Zhang

Ning

Shen

et al. 2021

Adv Elect Materials

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technology has been proposed. Its advantages are its ultra-high speed and long retention time. [19][20][21][22][23] The retention time of SFG memory exceeds 10 s, which is 10 2 times that of DRAM. Memory power consumption will benefit from this quasinon-volatile characteristic. In addition, the combination of SFG architecture and 2D materials also supports ultra-high-speed operation, and the writing and erasing time of the device is 10 3 times faster than that of non-volatile memory. Therefore, the quasi-non-volatile memory based on the SFG architecture used solves the problems of the slow speed of the non-volatile memory and the short retention time of the volatile memory. This study is based on the 2D WS 2 SFG FET, and realized a quasi-non-volatile memory with ultra-fast reading and writing speeds. Under the voltage pulses of −3 V 100 ns and 3 V 80 ns respectively, high-speed write 1 and erase 0 are realized and the data retention time exceeds 10 s. Secondly, the constructed SFG-FET can realize two different rectification modes of the p-n junction and n + -n junction. Among them, the p-n junction mode has a high rectification ratio of 10 5 . The device exhibits excellent performance and can be used in various applications in electronics and optoelectronics, such as memory, photovoltaics, and photodetectors.

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Gate-Tunable WSe₂/SnSe₂ Backward Diode with Ultrahigh-Reverse Rectification Ratio

Abstract: Introduction:

Cited by 67 publications

References 58 publications

Recent Progress on Two-Dimensional Materials

Recent Progress on Two-Dimensional Materials

Synthesis of ultrathin two-dimensional nanosheets and van der Waals heterostructures from non-layered γ-CuI

An Ultrafast Quasi‐Non‐Volatile Semi‐Floating Gate Memory with Low‐Power Optoelectronic Memory Application

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Gate-Tunable WSe2/SnSe2 Backward Diode with Ultrahigh-Reverse Rectification Ratio

Abstract: Introduction:

Cited by 67 publications

References 58 publications

Recent Progress on Two-Dimensional Materials

Recent Progress on Two-Dimensional Materials

Synthesis of ultrathin two-dimensional nanosheets and van der Waals heterostructures from non-layered γ-CuI

An Ultrafast Quasi‐Non‐Volatile Semi‐Floating Gate Memory with Low‐Power Optoelectronic Memory Application

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Product

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Gate-Tunable WSe₂/SnSe₂ Backward Diode with Ultrahigh-Reverse Rectification Ratio