A Fully Tunable Single-Walled Carbon Nanotube Diode

Abstract

We demonstrate a fully tunable diode structure utilizing a fully suspended single-walled carbon nanotube. The diode's turn-on voltage under forward bias can be continuously tuned up to 4.3 V by controlling gate voltages, which is ∼6 times the nanotube band gap energy. Furthermore, the same device design can be configured into a backward diode by tuning the band-to-band tunneling current with gate voltages. A nanotube backward diode is demonstrated for the first time with nonlinearity exceeding the ideal diode. These results suggest that a tunable nanotube diode can be a unique building block for developing next generation programmable nanoelectronic logic and integrated circuits.

Gate-tunable carbon nanotube–MoS 2 heterojunction p-n diode

“…Between the two gate bias extremes, the s-SWCNT/SLMoS 2 heterojunction transitions from an n-n + junction at V G = 80 V to a p-n junction at V G = −80 V. The large band gap of SLMoS 2 (>1.8 eV) (27) compared with that of the s-SWCNTs (∼0.7 eV) allows electrostatic depletion of SL-MoS 2 to a lightly n doped (n − ) or nearly intrinsic insulating state, thereby leading to |I f |/|I r | values exceeding 10 4 at V G = −80 V. On the other hand, the small band gap of the s-SWCNTs allows electrostatic inversion from p-doping to n-doping at large positive V G , resulting in poor |I f |/|I r | values for V G > 60 V. Gate tunable p-n homojunction diodes have been previously fabricated by split gating of individual SWCNTs. However, such homojunctions only allow control over the built-in voltage via differential biases in split gates (28,29). The present gate tunable p-n heterojunction, on the other hand, is fundamentally different as it has a built-in potential at zero gate bias as evident from the rectifying current (I)-voltage (V) (I-V) characteristics ( Fig.…”

Gate-Tunable WSe2/SnSe2 Backward Diode with Ultrahigh-Reverse Rectification Ratio

“…In this work, we exploit this property of the WSe2/SnSe2 heterojunction to demonstrate a backward diode with a large curvature coefficient of ~37 V -1 , coupled with an extremely high reverse rectification ratio of ~2.1 × 10 4 , outperforming previously reported numbers 19,20,[33][34][35][36][37][38][39][40][41][42][43] . We also demonstrate an efficient modulation of the rectification ratio by tuning the applied gate voltage, contact metals, and thickness of the WSe2 layer.…”

Metal-free ferromagnetic metal and intrinsic spin semiconductor: two different kinds of SWCNT functionalized BN nanoribbons

“…[13][14][15][16][17] Recently, Tang et al have studied semiconductorhalf-metal transition in zigzag edge graphene nanoribbons supported on hybrid fluorographene-graphane nanoribbons. 19,20 Due to their fascinating thermal, mechanical, chemical, and electrical and magnetic properties, [22][23][24][25][26][27][28][29][30][31][32][33][34] SWCNTs have been applied to a wide range of scientific and technological fields, such as, chemical and biological sensors, [23][24][25][26][27] gas purification and adsorption, 22 scanning probe microscopy tips, 30 as well as photo electronic devices [31][32][33] etc. 19,20 Due to their fascinating thermal, mechanical, chemical, and electrical and magnetic properties, [22][23][24][25][26][27][28][29][30][31][32][33][34] SWCNTs have been applied to a wide range of scientific and technological fields, such as, ...…”