Sensitivity improvement in porous silicon microwave detector

Abstract

Attempts to use microporous silicon structures in detection of microwave radiation were investigated. Point-contact-like samples containing microporous silicon layers were manufactured using traditional technique of electrochemical etching of p-type crystalline silicon. The response of the structures to microwave radiation of 10 GHz frequency was studied. It is shown that the microporous silicon containing samples exhibited sensitivity by several orders higher than that of similar detectors having no porous layers. The results were analysed within the model of hot carrier effects.

Structural and Morphological Properties of Nano Photonic Silicon Structure for Photonics Applications

“…Many preparation techniques have been adopted in synthesizing porous silicon among them is the electrochemical etching technique [16][17][18][19][20][21][22].…”

Photoresponse of Porous Silicon Structures to Infrared Radiation

“…Considerable quantity of interesting works was devoted to create a silicon radiator by means of cheap porous silicon technology [4,5]. A series of recent works was executed on the research of influence of microwave radiation * corresponding author; e-mail: eusat@vgtu.lt on the properties of porous silicon structures [6,7]. It was revealed that the structures had by several orders higher sensitivity to microwave radiation than similar semiconductor structures without a porous layer.…”