Structural and Morphological Properties of Nano Photonic Silicon Structure for Photonics Applications

Hassan, Mariam M.; Fakhri, Makram A.; Adnan, Salah A.

doi:10.4028/www.scientific.net/ddf.398.29

Cited by 19 publications

(15 citation statements)

References 32 publications

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“…Once the pulse count reaches 350, however, the Eg starts to drop again, which may result from improved crystallinity and/or a thicker film. At the same time, the band gap grows as lead ion concentration rises due to smaller grains and weaker quantum confinement [26]. To assess some of the electrical characteristics of the SnS thin film, hall measurements have been made.…”

Section: Resultsmentioning

confidence: 99%

Characterization of Nanocrystalline SnS Thin Film Fabricated used PLD Method for Photodetection Applications

Suad M.Kadhim

2024

IJNeaM

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Pulsed laser deposition was used to create tin sulfide (SnS) nanoparticles with a Nd:YAG laser (700 mJ) with laser pulses of (200, 250, 300, and 350 pulses). Nanoparticles were created and investigated using XRD, AFM, and UV-Vis spectroscopy to understand their optical, topographical, and electrical properties. After that, a SnS photodetector was built for the first time, and its performance, photoresponse, and sensitivity were evaluated. The development of monocrystalline SnS films was confirmed by X-ray diffraction (XRD) examination. Clear crystallization with increased crystalline size and the optimum orientation was observed in the sample synthesized SnS thin film treated with 300 pulses. The crystallite size increased from 44 at 200 to 77 nm for 350 pulses. These films were characterized by better surface morphology with (111) preferred crystals. In addition, atomic force microscopy (AFM) studies showed that the average diameter of generated SnS nanoparticles rose from (39.4 nm to 64.7) nm when the laser pulses increased in pulsed laser deposition. Transmission measurements were used to determine the films' absorption coefficient energy gap (Eg), and they showed that the optical transition was direct and that the transmittance value dropped with increasing laser pulses. Band gap energy is reduced from 2.139 to 1.773 eV. Moreover, Hall Effect measurements on all samples demonstrate that all thin films were n-type, with charge carrier concentration increasing with increased pulses and carrier mobility decreasing with increased pulses. The photodetectors ' photosensitivity was evaluated in the dark after depositing Al contacts on SnS thin films through a metal mask. The Pulses of enhancement cause a red shift in the values of particular detectivity and quantum efficiency. The highest responsivity was obtained at 350 pulses, 6.72×10−1 AW−1. The high (QE) of 150% at 200 p and detectivity of 2.9×1011 cm, Hz1/2.W-1 at 300p.

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Section: Resultsmentioning

confidence: 99%

Characterization of Nanocrystalline SnS Thin Film Fabricated used PLD Method for Photodetection Applications

Suad M.Kadhim

2024

IJNeaM

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“…where Eu is the Urbach energy, which describes the breadth of the localised states in the band gap, and α o is a constant. In terms of absorption, the above equation can be expressed as (8) [63][64][65][66][67].…”

Section: Resultsmentioning

confidence: 99%

A sight of view on electrical impacts, structural properties and surface roughness of tungsten trioxide thin film: effect of substrate temperatures in WO₃/Si device fabrication

Salim¹,

Hassan²,

A.Mohamed³

et al. 2023

Phys. Scr.

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Monoclinic WO3 thin films have been effectively deposited by a simple spray pyrolysis technique at a molar concentration of 0.01 M on a glass substrate in the temperature range of 473 to 673 K. These WO3 films were used as an interlayer between the metal and the semiconductor, which formed the basic structure of the photodetector. Effect of substrate temperature on WO3 films during the process of the deposition was systematically interpreted with respect to the structural, morphological, optical and electrical properties of the WO3 films. The X-ray diffraction pattern revealed the polycrystalline nature of the prepared films with monoclinic phases. At the substrate temperature of 623 K, the nano-thin films were strongly bonded to each other as observed from the FE-SEM images. Visible and ultraviolet spectroscopies indicated the band gap (Eg) of the WO3 thin film is 3.30 eV. The dc electrical study recorded a sharp increase in the electrical conductivity of the prepared film at substrate temperature of 623 K for tungsten trioxide. It is worth noting that all diodes showed a positive photoresponse under illumination. In particular, the photodetector with the thickness of 300 nm showed higher responsivity 0.02 A/W and detection specificity 8.29 x 1010 Jones.

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“…Furthermore, it has superior photo electronic properties, abundantly available and simple preparation procedures [3,4]. Cu 2 O has a unique cuprites structure through a body-centered cubic packing of copper atoms with oxygen atoms occupying the tetrahedral sites [5,6]. Cu 2 O is of interest and received great attention due to encouraging use in several application and technological elds.…”

Section: Introductionmentioning

confidence: 99%

Seed Layer-Assisted Chemical Bath Deposition of Cu2O Nanoparticles on ITO-Coated Glass Substrates with Tunable Morphology, Crystallinity, and Optical Properties

Alsultany¹,

Alhasan

Salim

2021

J Inorg Organomet Polym

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A seed layer-assisted chemical bath deposition (SCBD) method at low temperature has been developed to growth uniform and high crystal quality cuprous oxide (Cu 2 O) nanoparticles on transparent conductive/glass substrates. These lms were grown on indium-doped tin oxide (ITO) as seed layer which deposited on glass substrates using magnetron sputtering-RF . The ITO seed annealing process by continuous beam (CW) of CO 2 laser was used prior to growing the Cu2O nanoparticles. In this study, controlled synthesis of Cu 2 O lms were investigated by controlling the growth temperature at 55, 60, 65, and 70 o C, respectively. The products of lms were characterized in detail by using eld emission scanning electron microscopy (FESEM), X-ray diffraction (XRD). Optical properties of this Cu 2 O nanoparticles were examined UV-Vis spectroscopy. The study suggests synthesis route for developing high quality Cu 2 O nanoparticles using SCBD method for optical and electronic applications.

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Structural and Morphological Properties of Nano Photonic Silicon Structure for Photonics Applications

Cited by 19 publications

References 32 publications

Characterization of Nanocrystalline SnS Thin Film Fabricated used PLD Method for Photodetection Applications

Characterization of Nanocrystalline SnS Thin Film Fabricated used PLD Method for Photodetection Applications

A sight of view on electrical impacts, structural properties and surface roughness of tungsten trioxide thin film: effect of substrate temperatures in WO₃/Si device fabrication

Seed Layer-Assisted Chemical Bath Deposition of Cu2O Nanoparticles on ITO-Coated Glass Substrates with Tunable Morphology, Crystallinity, and Optical Properties

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Structural and Morphological Properties of Nano Photonic Silicon Structure for Photonics Applications

Cited by 19 publications

References 32 publications

Characterization of Nanocrystalline SnS Thin Film Fabricated used PLD Method for Photodetection Applications

Characterization of Nanocrystalline SnS Thin Film Fabricated used PLD Method for Photodetection Applications

A sight of view on electrical impacts, structural properties and surface roughness of tungsten trioxide thin film: effect of substrate temperatures in WO3/Si device fabrication

Seed Layer-Assisted Chemical Bath Deposition of Cu2O Nanoparticles on ITO-Coated Glass Substrates with Tunable Morphology, Crystallinity, and Optical Properties

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A sight of view on electrical impacts, structural properties and surface roughness of tungsten trioxide thin film: effect of substrate temperatures in WO₃/Si device fabrication