Sensing Gallium Nitride HEMT junction temperature using gate drive output transient properties

Niu, He; Lorenz, Robert D.

doi:10.1109/apec.2016.7468150

Cited by 16 publications

(2 citation statements)

References 20 publications

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“…Inductance in High-Power IGBT Modules Since the electrical parameters in the gate loop are low-voltage quantities, the gate-related TSEPs can be sampled by low-voltage sampling circuits directly. Some key published gate-related TSEPs are based on: peak gate current [8], integration of gate current [20], threshold voltage vth [27], and Miller plateau width [28]. On the other hand, plenty of collector-related TSEPs can be identified, e.g.…”

Section: Enabling Junction Temperature Estimation Via Collector-side mentioning

confidence: 99%

“…In view of the characteristics of fast response (within 100 µs), high accuracy, and low cost, a large numbers of TSEP-based methods have been proposed and applied to MOSFETs, IGBTs, IGCTs, and Wide-Band-Gap devices over past five years [18][19][20]. Considering the operating status of power devices, the optional TSEP candidates can be classified into the static TSEPs and dynamic TSEPs (d-TSEPs) [21][22][23].…”

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Enabling Junction Temperature Estimation via Collector-Side Thermo-Sensitive Electrical Parameters Through Emitter Stray Inductance in High-Power IGBT Modules

Luo

Iannuzzo

et al. 2018

IEEE Trans. Ind. Electron.

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This paper proposes the adoption of the inherent emitter stray inductance LeE in high-power insulated gate bipolar transistor (IGBT) modules as a new dynamic thermo-sensitive electrical parameter (d-TSEP). Furthermore, a family of 14 derived dynamic TSEP candidates has been extracted and classified in voltage-based, time-based and charge-based TSEPs. Accordingly, the perspectives and the implementation challenges of the proposed method are discussed and summarized. Finally, high-power test platforms are designed and adopted to experimentally verify the theoretical analysis. Index Terms-High-power IGBT modules, auxiliary parasitic inductance, dynamic thermo-sensitive electrical parameters, junction temperature extraction principles. I. INTRODUCTION HE fast-growing pace of high-power conversion systems keep developing high-power Insulated Gate Bipolar Transistors (IGBTs) [1,2]. Thermal performance is currently regarded as one of the most important specifications in high-power modules, since both the short-term characteristics [3] and long-term ones are temperature-dependent [4,5]. In terms of the maximum operating junction temperature Tj, the commercially-available silicon-based power devices are rated up to 175 °C and the expected operation Tj in Wide-Band-Gap devices can reach 300 °C [6]. Hence, the knowledge of Tj has a crucial effect on the safe operation area of IGBTs. So far, many practical methods have been proposed [7-10]. Generally, the widely-studied Tj estimation methods in

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Section: Enabling Junction Temperature Estimation Via Collector-side mentioning

confidence: 99%

mentioning

confidence: 99%

Enabling Junction Temperature Estimation via Collector-Side Thermo-Sensitive Electrical Parameters Through Emitter Stray Inductance in High-Power IGBT Modules

Luo

Iannuzzo

et al. 2018

IEEE Trans. Ind. Electron.

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Junction temperature monitoring of silicon carbide MOSFET based on turn‐off voltage spike

Liu,

et al. 2024

Circuit Theory & Apps

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Because of the advantages of high switching speed, silicon carbide (SiC) devices are widely used in high‐power power electronic equipment. Real‐time monitoring of junction temperature is very important for the safe operation of equipment. There have been many studies on traditional junction temperature monitoring methods based on Si IGBT, but the dynamic characteristics of SiC MOSFETs are changed due to their different physical structure and parasitic parameters, which make the traditional methods no longer applicable. In this paper, the junction temperature can be extracted from the switching process of SiC MOSFET by using the turn‐off voltage spike as the index of thermosensitive electrical parameter (TSEP). In addition, the effect of working voltage, current, and different materials on turn‐off voltage spike is also studied. The simulation platform of Ansys/Simplorer and the experimental test platforms are built, and the theory of junction temperature detection based on turn‐off voltage spike is verified. The simulation and experimental results show that turn‐off voltage spike is a feasible TSEP, which can be used to extract junction temperature of SiC MOSFET with good linearity and instantaneity.

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A simple ZVT auxiliary circuit for full-bridge based bridgeless single-phase PFC with hybrid PWM modulation scheme

Xia

2018

2018 IEEE Applied Power Electronics Conference and Exposition (APEC)

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Sensing Gallium Nitride HEMT junction temperature using gate drive output transient properties

Cited by 16 publications

References 20 publications

Enabling Junction Temperature Estimation via Collector-Side Thermo-Sensitive Electrical Parameters Through Emitter Stray Inductance in High-Power IGBT Modules

Enabling Junction Temperature Estimation via Collector-Side Thermo-Sensitive Electrical Parameters Through Emitter Stray Inductance in High-Power IGBT Modules

Junction temperature monitoring of silicon carbide MOSFET based on turn‐off voltage spike

A simple ZVT auxiliary circuit for full-bridge based bridgeless single-phase PFC with hybrid PWM modulation scheme

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